@inproceedings{46bea6a09a3b4278b55c44fd81077b84,
title = "Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire",
abstract = "In the present study, GaN nanowall network (NWN) structures are grown using rf-plasma assisted molecular beam epitaxy (PA-MBE) system under highly nitrogen rich conditions over nitrided and bare c-plane sapphire substrates. Nitridation is carried out prior to growth for two of the samples and its effect on the crystal quality of the resultant nanowall structure is studied and compared with the same structure grown on bare sapphire. It is found that nitriding the c-plane sapphire prior to growth results in an improvement of crystalline quality of the resulting nanowall as observed by the reduction in FWHM of (0002) XRC.",
author = "Varun Thakur and Nayak, \{Sanjay Kumar\} and Nagaraja, \{K. K.\} and Shivaprasad, \{S. M.\}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014 ; Conference date: 03-12-2014 Through 06-12-2014",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/ICEmElec.2014.7151177",
language = "English",
series = "2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 IEEE 2nd International Conference on Emerging Electronics",
address = "United States",
}