Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure

Nan Hung Cheng; Yung Fang Chen; Liann Be Chang; Ping Yu Kuei; Yi Cherng Ferng; Atanu Das; Shu Liang Lin; Ching Chi Lin

doi:10.1002/tee.22904

Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure

Nan Hung Cheng^*, Yung Fang Chen, Liann Be Chang, Ping Yu Kuei, Yi Cherng Ferng, Atanu Das, Shu Liang Lin, Ching Chi Lin

^*Corresponding author for this work

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal

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1 Citation (Scopus)

Abstract

We report the improvement in the electrostatic discharge (ESD) characteristics of an AlGaN/GaN high-electron mobility transistor (HEMT) with a metal–insulator–metal (MIM) capacitor structure on an aluminum nitride (AlN) flip-chip (FC) submount. Compared with an HEMT without an FC, the measured results for the HEMT with an FC revealed improvements of 25% and 150% under drain-to-source and gate-to-source ESD stress, respectively. This improvement can be attributed to an additional stress-bypassing path formed in the MIM structure on the AlN FC submount that allowed the flow of ESD current and supported the charge by using additional capacitance.

Original language	English
Pages (from-to)	1091-1094
Number of pages	4
Journal	IEEJ Transactions on Electrical and Electronic Engineering
Volume	14
Issue number	7
DOIs	https://doi.org/10.1002/tee.22904
Publication status	Published - 07-2019

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1002/tee.22904

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Cheng, N. H., Chen, Y. F., Chang, L. B., Kuei, P. Y., Ferng, Y. C., Das, A., Lin, S. L., & Lin, C. C. (2019). Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure. IEEJ Transactions on Electrical and Electronic Engineering, 14(7), 1091-1094. https://doi.org/10.1002/tee.22904

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title = "Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure",

abstract = "We report the improvement in the electrostatic discharge (ESD) characteristics of an AlGaN/GaN high-electron mobility transistor (HEMT) with a metal–insulator–metal (MIM) capacitor structure on an aluminum nitride (AlN) flip-chip (FC) submount. Compared with an HEMT without an FC, the measured results for the HEMT with an FC revealed improvements of 25\% and 150\% under drain-to-source and gate-to-source ESD stress, respectively. This improvement can be attributed to an additional stress-bypassing path formed in the MIM structure on the AlN FC submount that allowed the flow of ESD current and supported the charge by using additional capacitance.",

author = "Cheng, \{Nan Hung\} and Chen, \{Yung Fang\} and Chang, \{Liann Be\} and Kuei, \{Ping Yu\} and Ferng, \{Yi Cherng\} and Atanu Das and Lin, \{Shu Liang\} and Lin, \{Ching Chi\}",

note = "Publisher Copyright: {\textcopyright} 2019 Institute of Electrical Engineers of Japan. Published by John Wiley \& Sons, Inc.",

year = "2019",

month = jul,

doi = "10.1002/tee.22904",

language = "English",

volume = "14",

pages = "1091--1094",

journal = "IEEJ Transactions on Electrical and Electronic Engineering",

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publisher = "John Wiley \& Sons Inc.",

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Cheng, NH, Chen, YF, Chang, LB, Kuei, PY, Ferng, YC, Das, A, Lin, SL & Lin, CC 2019, 'Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure', IEEJ Transactions on Electrical and Electronic Engineering, vol. 14, no. 7, pp. 1091-1094. https://doi.org/10.1002/tee.22904

Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure. / Cheng, Nan Hung; Chen, Yung Fang; Chang, Liann Be et al.
In: IEEJ Transactions on Electrical and Electronic Engineering, Vol. 14, No. 7, 07.2019, p. 1091-1094.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure

AU - Cheng, Nan Hung

AU - Chen, Yung Fang

AU - Chang, Liann Be

AU - Kuei, Ping Yu

AU - Ferng, Yi Cherng

AU - Das, Atanu

AU - Lin, Shu Liang

AU - Lin, Ching Chi

PY - 2019/7

Y1 - 2019/7

N2 - We report the improvement in the electrostatic discharge (ESD) characteristics of an AlGaN/GaN high-electron mobility transistor (HEMT) with a metal–insulator–metal (MIM) capacitor structure on an aluminum nitride (AlN) flip-chip (FC) submount. Compared with an HEMT without an FC, the measured results for the HEMT with an FC revealed improvements of 25% and 150% under drain-to-source and gate-to-source ESD stress, respectively. This improvement can be attributed to an additional stress-bypassing path formed in the MIM structure on the AlN FC submount that allowed the flow of ESD current and supported the charge by using additional capacitance.

AB - We report the improvement in the electrostatic discharge (ESD) characteristics of an AlGaN/GaN high-electron mobility transistor (HEMT) with a metal–insulator–metal (MIM) capacitor structure on an aluminum nitride (AlN) flip-chip (FC) submount. Compared with an HEMT without an FC, the measured results for the HEMT with an FC revealed improvements of 25% and 150% under drain-to-source and gate-to-source ESD stress, respectively. This improvement can be attributed to an additional stress-bypassing path formed in the MIM structure on the AlN FC submount that allowed the flow of ESD current and supported the charge by using additional capacitance.

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Improvement in electrostatic discharge robustness of a gallium-nitride-based flip-chip high-electron mobility transistor with a metal–insulator–metal capacitor structure

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