@inproceedings{b396e079b90b4bb3ac044c680d853841,
title = "Improvement of ESD robustness in gallium nitride-based flip-chip HEMT by introducing metal-insulator-metal capacitor",
abstract = "We report on improvement of ESD characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) using metal-insulator-metal (MIM) structure aluminium nitride (AlN) flip-chip (FC) submount. Compared with FC-free HEMT, measured results of the FC HEMT show the improvements of 25 and 150\% under drain-to-source and gate-to-source electrostatic discharge (ESD) stress respectively, which is attributed to an extra path formed in the MIM structure AlN FC submount to flow the ESD current and to support the charge by the additional capacitances.",
author = "Kuei, \{Ping Yu\} and Cheng, \{Nan Hung\} and Chen, \{Yung Fang\} and Ferng, \{Yi Cherng\} and Atanu Das and Lin, \{Shu Liang\} and Lin, \{Ching Chi\} and Chang, \{Liann Be\}",
note = "Publisher Copyright: {\textcopyright} 2014 The Institute of Electronics, Information and Communication Engineer.; 2014 International Symposium on Electromagnetic CompatibiIity, EMC 2014 ; Conference date: 12-05-2014 Through 16-05-2014",
year = "2014",
month = dec,
day = "23",
language = "English",
series = "IEEE International Symposium on Electromagnetic Compatibility",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "721--724",
booktitle = "EMC 2014/Tokyo - 2014 International Symposium on Electromagnetic CompatibiIity, Proceedings",
address = "United States",
}