TY - JOUR
T1 - Improvement of third-order NLO properties of vacuum deposited Cd1-xPbxS nanostructured thin films for optoelectronic device applications
AU - Bairy, Raghavendra
AU - Vijeth, H.
AU - Kulkarni, Suresh D.
AU - Murari, M. S.
AU - Bhat, Udaya K.
N1 - Funding Information:
Dr. R. Bairy would like to thank N.M.A.M.I.T. NITTE (Deemed to be University), Karnataka, India for providing all research facilities and support for this study.
Publisher Copyright:
© 2023 Elsevier Ltd
PY - 2023/5
Y1 - 2023/5
N2 - A polycrystalline nanostructured cadmium lead sulfide thin film was deposited using the thermal evaporation (PVD) technique (Cd1-xPbxS with x = 0.00, 0.01, 0.05 and 0.1 wt.% of Pb). Structural parameters of as-prepared Cd1-xPbxS thin films have been studied through X-ray diffraction. The optical investigation demonstrates that Cd1-xPbxS film's optical band gap (Eg) may be adjusted from the visible to the near-infrared region. (2.64 - 2.42 eV). The film is substantially more appropriate for absorbing layers in solar cells and optoelectronic applications due to the large decrease in ‘Eg.’ The enhanced Pb doping was found to have altered the surface morphology, verified by Field Emission Scanning Electron Microscopy (FESEM) images. The doped films also showed a significant red shift in the band edge and increased transmittance in the visible and NIR regions. The third-order nonlinear optical (TONLO) parameters of the samples were determined from the Q-switched Nd: YAG laser with 65-ps pulse duration at 1064 nm. The investigated TONLO components such as nonlinear absorption coefficient (β), nonlinear refractive index (n2) and the susceptibility χ(3)were found to be in the range from 1.16 × 10−3 to 4.12 × 10−3 (cmW−1), 1.06 × 10−8 to 3.32 × 10−8 (cm2 W−1) and 1.23 × 10−4 to 5.62 × 10−4 (esu) respectively. The results indicate that Pb-doping on CdS nanostructures on surface morphology can be used to modify NLO characteristics.Cd1-xPbxS thin film is a potential and able material for optoelectronic device applications, as seen by these encouraging NLO results.
AB - A polycrystalline nanostructured cadmium lead sulfide thin film was deposited using the thermal evaporation (PVD) technique (Cd1-xPbxS with x = 0.00, 0.01, 0.05 and 0.1 wt.% of Pb). Structural parameters of as-prepared Cd1-xPbxS thin films have been studied through X-ray diffraction. The optical investigation demonstrates that Cd1-xPbxS film's optical band gap (Eg) may be adjusted from the visible to the near-infrared region. (2.64 - 2.42 eV). The film is substantially more appropriate for absorbing layers in solar cells and optoelectronic applications due to the large decrease in ‘Eg.’ The enhanced Pb doping was found to have altered the surface morphology, verified by Field Emission Scanning Electron Microscopy (FESEM) images. The doped films also showed a significant red shift in the band edge and increased transmittance in the visible and NIR regions. The third-order nonlinear optical (TONLO) parameters of the samples were determined from the Q-switched Nd: YAG laser with 65-ps pulse duration at 1064 nm. The investigated TONLO components such as nonlinear absorption coefficient (β), nonlinear refractive index (n2) and the susceptibility χ(3)were found to be in the range from 1.16 × 10−3 to 4.12 × 10−3 (cmW−1), 1.06 × 10−8 to 3.32 × 10−8 (cm2 W−1) and 1.23 × 10−4 to 5.62 × 10−4 (esu) respectively. The results indicate that Pb-doping on CdS nanostructures on surface morphology can be used to modify NLO characteristics.Cd1-xPbxS thin film is a potential and able material for optoelectronic device applications, as seen by these encouraging NLO results.
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U2 - 10.1016/j.materresbull.2023.112146
DO - 10.1016/j.materresbull.2023.112146
M3 - Article
AN - SCOPUS:85146420964
SN - 0025-5408
VL - 161
JO - Materials Research Bulletin
JF - Materials Research Bulletin
M1 - 112146
ER -