Influence of high e-Mobility Substrates on Performance of n-MOSFETs: A Comparative Analysis

This research work focusses on studying the effect of high e-mobility substrate on n-MOSFET parameters like output characteristics, transfer characteristics, threshold voltage and transconductance. COMSOL Multiphysics simulation tool is used to design and simulate the model. Si, InP, Ge, GaAs, GaP are used as substrates for designing n-MOSFET. From the output characteristics of n-MOSFET with above-mentioned substrates the drain currents of n-MOSFET increases with change is substrate materials for a given value of gate voltage. GaAs substrate has shown significant improvement in drain current. Furthermore, it can be seen from transfer characteristics that the transconductance of n-MOSFET increases as the substrate changes in the order Si, GaP, GaAs, Ge, and InP, with Si showing 1.25 (μA/V) and InP showing 4.4 (μ A/V) Our results show the potential application of n-MOSFETs with substrates showing higher transconductance in RF circuits and audio amplifiers due to their increased amplification capacities.