Influence of indium and selenium co-doping on structural and thermoelectric properties of Bi2Te3 alloys

Ganesh Shridhar Hegde, A. N. Prabhu, M. K. Chattopadhyay

Research output: Contribution to journalArticlepeer-review


The melt-grown, indium and selenium co-doped Bi2Te3 single-crystal system is studied with a purpose to improve and analyze the thermoelectric performance in the low and near room-temperature range (10–400 K). The influence of co-dopants on the crystalline perfection, symmetry, dislocation, and single-crystal quality is investigated using high-resolution X-ray diffraction. The surface morphological features show the existence of small-angle grain boundaries, white patches, and tilt boundaries. Degenerate type of semiconducting behavior is seen in all the samples over the entire temperature range. The existence of small polarons is experimentally inferred from temperature-dependent electrical resistivity. Measurement of Seebeck coefficient confirms p- to n-type transition in the crystals doped with indium and selenium. The total thermal conductivity at 11 K was decreased by 3.4 times in (Bi0.98In0.02)2Te2.7Se0.3 as compared to pristine sample. Therefore, this novel co-doped indium and selenium Bi2Te3 single-crystal combination is viable to use as a competitor for low and near-room-temperature thermoelectric applications.

Original languageEnglish
Article number1234
JournalJournal of Materials Science: Materials in Electronics
Issue number15
Publication statusPublished - 05-2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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