TY - JOUR
T1 - Influence of indium and selenium co-doping on structural and thermoelectric properties of Bi2Te3 alloys
AU - Hegde, Ganesh Shridhar
AU - Prabhu, A. N.
AU - Chattopadhyay, M. K.
N1 - Funding Information:
Ganesh Shridhar Hegde (GSH) would like to acknowledge the Manipal Academy of Higher Education for providing financial support from Dr. T. M. A. doctoral fellowship. The authors want to express their gratitude towards UGC DAE, Indore & Dr. V. Raghavendra Reddy for providing the HRXRD facility. GSH would like to acknowledge Mr. Manoj SP for special co-operation completing the research article. ANP is thankful for the financial support provided by UGC-DAE, Mumbai, under the project grant of UDCSR/MUM/AO/CRS-M-314/2021/298.
Funding Information:
Ganesh Shridhar Hegde (GSH) would like to acknowledge the Manipal Academy of Higher Education for providing financial support from Dr. T. M. A. doctoral fellowship. The authors want to express their gratitude towards UGC DAE, Indore & Dr. V. Raghavendra Reddy for providing the HRXRD facility. GSH would like to acknowledge Mr. Manoj SP for special co-operation completing the research article. ANP is thankful for the financial support provided by UGC-DAE, Mumbai, under the project grant of UDCSR/MUM/AO/CRS-M-314/2021/298.
Funding Information:
Open access funding provided by Manipal Academy of Higher Education, Manipal. The research leading to these results received funding from project grant UDCSR/MUM/AO/CRS-M-314/2021/298 and Dr. T. M. A.‘s PhD scholarship.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/5
Y1 - 2023/5
N2 - The melt-grown, indium and selenium co-doped Bi2Te3 single-crystal system is studied with a purpose to improve and analyze the thermoelectric performance in the low and near room-temperature range (10–400 K). The influence of co-dopants on the crystalline perfection, symmetry, dislocation, and single-crystal quality is investigated using high-resolution X-ray diffraction. The surface morphological features show the existence of small-angle grain boundaries, white patches, and tilt boundaries. Degenerate type of semiconducting behavior is seen in all the samples over the entire temperature range. The existence of small polarons is experimentally inferred from temperature-dependent electrical resistivity. Measurement of Seebeck coefficient confirms p- to n-type transition in the crystals doped with indium and selenium. The total thermal conductivity at 11 K was decreased by 3.4 times in (Bi0.98In0.02)2Te2.7Se0.3 as compared to pristine sample. Therefore, this novel co-doped indium and selenium Bi2Te3 single-crystal combination is viable to use as a competitor for low and near-room-temperature thermoelectric applications.
AB - The melt-grown, indium and selenium co-doped Bi2Te3 single-crystal system is studied with a purpose to improve and analyze the thermoelectric performance in the low and near room-temperature range (10–400 K). The influence of co-dopants on the crystalline perfection, symmetry, dislocation, and single-crystal quality is investigated using high-resolution X-ray diffraction. The surface morphological features show the existence of small-angle grain boundaries, white patches, and tilt boundaries. Degenerate type of semiconducting behavior is seen in all the samples over the entire temperature range. The existence of small polarons is experimentally inferred from temperature-dependent electrical resistivity. Measurement of Seebeck coefficient confirms p- to n-type transition in the crystals doped with indium and selenium. The total thermal conductivity at 11 K was decreased by 3.4 times in (Bi0.98In0.02)2Te2.7Se0.3 as compared to pristine sample. Therefore, this novel co-doped indium and selenium Bi2Te3 single-crystal combination is viable to use as a competitor for low and near-room-temperature thermoelectric applications.
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U2 - 10.1007/s10854-023-10547-y
DO - 10.1007/s10854-023-10547-y
M3 - Article
AN - SCOPUS:85160433195
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 15
M1 - 1234
ER -