Investigating Undoped HfO2 as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure

Bhaskar Awadhiya; Pravin N. Kondekar; Ashvinee Deo Meshram

doi:10.1007/s42341-019-00137-3

Investigating Undoped HfO₂ as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure

Bhaskar Awadhiya, Pravin N. Kondekar, Ashvinee Deo Meshram

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this paper, we have investigated non-leaky and leaky FE–DE heterostructure with undoped HfO₂ and Zr doped HfO₂ as a ferroelectric material. Use of undoped HfO₂ in place of Zr doped HfO₂ as a ferroelectric material will ease the deposition process and simplify the processing steps, as ferroelectricity in undoped HfO₂ can be obtained without introduction of dopant elements. This replacement of ferroelectric oxide enhances the performance of heterostructure in terms of absolute voltage amplification (V_D> V_S). Undoped HfO₂ provides higher magnitude voltage amplification as compared to Zr doped HfO₂ although the range to voltage amplification is reduced.

Original language	English
Pages (from-to)	467-472
Number of pages	6
Journal	Transactions on Electrical and Electronic Materials
Volume	20
Issue number	5
DOIs	https://doi.org/10.1007/s42341-019-00137-3
Publication status	Published - 01-10-2019

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1007/s42341-019-00137-3

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abstract = "In this paper, we have investigated non-leaky and leaky FE–DE heterostructure with undoped HfO2 and Zr doped HfO2 as a ferroelectric material. Use of undoped HfO2 in place of Zr doped HfO2 as a ferroelectric material will ease the deposition process and simplify the processing steps, as ferroelectricity in undoped HfO2 can be obtained without introduction of dopant elements. This replacement of ferroelectric oxide enhances the performance of heterostructure in terms of absolute voltage amplification (VD> VS). Undoped HfO2 provides higher magnitude voltage amplification as compared to Zr doped HfO2 although the range to voltage amplification is reduced.",

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AB - In this paper, we have investigated non-leaky and leaky FE–DE heterostructure with undoped HfO2 and Zr doped HfO2 as a ferroelectric material. Use of undoped HfO2 in place of Zr doped HfO2 as a ferroelectric material will ease the deposition process and simplify the processing steps, as ferroelectricity in undoped HfO2 can be obtained without introduction of dopant elements. This replacement of ferroelectric oxide enhances the performance of heterostructure in terms of absolute voltage amplification (VD> VS). Undoped HfO2 provides higher magnitude voltage amplification as compared to Zr doped HfO2 although the range to voltage amplification is reduced.

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Investigating Undoped HfO₂ as Ferroelectric Oxide in Leaky and Non-Leaky FE–DE Heterostructure

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