INIS
investigations
100%
doped materials
100%
elastic properties
100%
aluminium nitrides
100%
concentration
36%
applications
27%
devices
27%
thin films
27%
piezoelectricity
27%
films
18%
crystallography
18%
physical properties
18%
orientation
18%
young modulus
18%
lattice parameters
18%
poisson ratio
18%
comparative evaluations
9%
peaks
9%
figure of merit
9%
crystals
9%
xrd
9%
chemical properties
9%
hardness
9%
substrates
9%
density functional method
9%
compatibility
9%
elasticity
9%
coupling
9%
polarization
9%
microelectromechanical systems
9%
density of states
9%
sputtering
9%
magnetrons
9%
Material Science
Aluminum Nitride
100%
Elasticity
100%
Microelectromechanical System
27%
Thin Films
27%
Alloying
18%
Density
18%
Film
18%
Piezoelectricity
18%
Elastic Moduli
18%
Physical Property
18%
Lattice Constant
18%
Young's Modulus
18%
Poisson Ratio
18%
Ultimate Tensile Strength
9%
Chemical Property
9%
Structural Property
9%
X-Ray Diffraction
9%
Magnetron Sputtering
9%
Piezoelectric Material
9%
Elastic Deformation
9%
Electromechanical Coupling
9%
Engineering
Nitride
100%
Microelectromechanical System
27%
Thin Films
27%
Young's Modulus
18%
Deposited Film
18%
Poisson Ratio
18%
Bulk Modulus
18%
Alloying
18%
Crystallographic Orientation
18%
Lattice Constant
18%
Elastic Constant
18%
Lattice Parameter
18%
Piezoelectric
9%
Tensile Stress σ
9%
Piezoelectric Material
9%
Elastic Deformation
9%
Coupling Coefficient
9%
Phase Separation
9%
Structural Property
9%
Figure of Merit
9%
Magnetron
9%
Discrete Fourier Transform
9%