Investigation of electrical properties in double barrier MTJ with Perpendicular Magnetic Anisotropy

In this study, we present a comprehensive electrical model analysis for Perpendicular Magnetic Anisotropy Double Barrier Magnetic Tunnel Junction (PMA DB-MTJ), a promising class of spintronic devices with potential applications in non-volatile memory (NVM) and logic design (LD). This model incorporates key parameters such as tunneling barrier thickness (t_ox,T(B)), damping factor (α), STT efficiency, thermal Stability (Δ) to accurately represent the device behavior. Leveraging this model, we conduct extensive simulations to explore the influence of various design parameters on the electrical characteristics of DB-MTJ, including tunnel magnetoresistance ratio (TMR), Resistance Area (RA) Product, α, and Thickness of oxide Barriers (t_ox). Furthermore, we investigate the impact of external factors such as temperature, Voltage amplitude and Pulse width on device performance, providing valuable insights for device optimization and integration into practical circuits. Our findings not only contribute to a deeper understanding of the underlying physics governing DB-MTJ devices but also offer valuable guidelines for their design and implementation in next-generation spintronic systems.