TY - JOUR
T1 - Investigation of near-room and high-temperature thermoelectric properties of (Bi0.98In0.02)2Se2.7Te0.3/Bi2Te3 composite system
AU - Hegde, Ganesh Shridhar
AU - Prabhu, A. N.
AU - Rao, Ashok
AU - Gurukrishna, K.
AU - Deepika Shanubhogue, U.
N1 - Funding Information:
Dr. T. M. A.’s PhD fellowship was funded in part by the Manipal Academy of Higher Education, which Ganesh Shridhar Hegde (GSH) would like to thank for its assistance. ANP expresses gratitude to UGC-DAE, Mumbai, for its financial assistance under the terms of the project grant UDCSR/MUM/AO/CRS-M-314/2021/298. The DST-FIST Grant (SR/FIST/PS-1/2017/8) and the Council of Scientific and Industrial Research Grant (Sanction no: 03(1409)/17/EMR-II) provided the funding necessary for one of the authors (AR) to complete this study.
Funding Information:
The research leading to these results received funding from project grant UDCSR/MUM/AO/CRS-M-314/2021/298 and DST-FIST Grant (SR/FIST/PS-1/2017/8).
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/11
Y1 - 2022/11
N2 - Polycrystalline composite samples of (Bi0.98In0.02)2Se2.7Te0.3/Bi2Te3 with different concentrations of Bi2Te3 such as 5%,10%,15% and 20% were prepared by the solid-state reaction technique. The X-Ray diffraction analysis has shown the hexagonal composite crystal structure with space group of R3 ¯ m. Field emission scanning electronic microscope shows secondary particles on the surface of the samples. All the samples have shown the usual semi-conducting behaviour throughout the temperature range. It is observed that bismuth has been co-ordinated with 6 selenium atoms in (Bi0.98In0,02)2Se2.7Te0.3 compound and it has enormous selenium vacancies. The electrical resistivity represents the noteworthy result of the grain boundaries leading to the higher content of scattering centres in the polycrystalline composite samples. It is found that the electronegativity differences of In and Te, In and Se are less than Bi and Se, Bi and Te is the reason for the decrease in Seebeck coefficient in the compound containing 15% and 20% of Bi2Te3.
AB - Polycrystalline composite samples of (Bi0.98In0.02)2Se2.7Te0.3/Bi2Te3 with different concentrations of Bi2Te3 such as 5%,10%,15% and 20% were prepared by the solid-state reaction technique. The X-Ray diffraction analysis has shown the hexagonal composite crystal structure with space group of R3 ¯ m. Field emission scanning electronic microscope shows secondary particles on the surface of the samples. All the samples have shown the usual semi-conducting behaviour throughout the temperature range. It is observed that bismuth has been co-ordinated with 6 selenium atoms in (Bi0.98In0,02)2Se2.7Te0.3 compound and it has enormous selenium vacancies. The electrical resistivity represents the noteworthy result of the grain boundaries leading to the higher content of scattering centres in the polycrystalline composite samples. It is found that the electronegativity differences of In and Te, In and Se are less than Bi and Se, Bi and Te is the reason for the decrease in Seebeck coefficient in the compound containing 15% and 20% of Bi2Te3.
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U2 - 10.1007/s10854-022-09221-6
DO - 10.1007/s10854-022-09221-6
M3 - Article
AN - SCOPUS:85140015201
SN - 0957-4522
VL - 33
SP - 25163
EP - 25173
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 33
ER -