Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films

Ranjan Kr Ghadai; Soham Das; Subhash Chandra Mondal; Bibhu Prasad Swain

doi:10.1007/978-981-10-4765-7_31

Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films

Ranjan Kr Ghadai^*
, Soham Das
, Subhash Chandra Mondal
, Bibhu Prasad Swain

^*Corresponding author for this work

School of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by thermal chemical vapor deposition technique by varying the nitrogen flow rate at a constant C₂H₂ flow. The influence of nitrogen incorporation on the microstructure and structural electronic properties of N-DLC films were investigated by Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS). SEM images reveal the DLC nanoparticles formation and carbon nanowires formations for 70 and 130, sccm nitrogen flow rate respectively. The Raman spectra of N-DLC investigated D and G peaks at 1300 and 1600, cm⁻¹ respectively. X-ray diffraction of N-DLC indicated the crystallite sizes 1.74 and 8.78, nm at different peak position. Due to nitrogen incorporation in DLC thin films the core orbital spectra of C(1s) shifted from 284 to 286, eV for nitrogen flow increased from 70 to 130, sccm. In the present paper, an attempt has been made to synthesize nitrogen incorporated DLC films using thermal chemical vapor deposition technique to study their structural and microstructural properties.

Original language	English
Title of host publication	Advances in Electronics, Communication and Computing - ETAEERE 2016
Editors	Swagatam Das, Akhtar Kalam, Kalpana Sharma
Publisher	Springer Verlag
Pages	301-306
Number of pages	6
ISBN (Print)	9789811047640
DOIs	https://doi.org/10.1007/978-981-10-4765-7_31
Publication status	Published - 2018
Event	International Conference on Emerging Trends and Advances in Electrical Engineering and Renewable Energy, ETAEERE 2016 - Majhitar, India Duration: 17-12-2016 → 18-12-2016

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	443
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Conference

Conference	International Conference on Emerging Trends and Advances in Electrical Engineering and Renewable Energy, ETAEERE 2016
Country/Territory	India
City	Majhitar
Period	17-12-16 → 18-12-16

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering

Access to Document

10.1007/978-981-10-4765-7_31

Cite this

Ghadai, R. K., Das, S., Mondal, S. C., & Swain, B. P. (2018). Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films. In S. Das, A. Kalam, & K. Sharma (Eds.), Advances in Electronics, Communication and Computing - ETAEERE 2016 (pp. 301-306). (Lecture Notes in Electrical Engineering; Vol. 443). Springer Verlag. https://doi.org/10.1007/978-981-10-4765-7_31

@inproceedings{c8953c36848046ebb1556561d13bd877,

title = "Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films",

abstract = "Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by thermal chemical vapor deposition technique by varying the nitrogen flow rate at a constant C2H2 flow. The influence of nitrogen incorporation on the microstructure and structural electronic properties of N-DLC films were investigated by Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS). SEM images reveal the DLC nanoparticles formation and carbon nanowires formations for 70 and 130, sccm nitrogen flow rate respectively. The Raman spectra of N-DLC investigated D and G peaks at 1300 and 1600, cm−1 respectively. X-ray diffraction of N-DLC indicated the crystallite sizes 1.74 and 8.78, nm at different peak position. Due to nitrogen incorporation in DLC thin films the core orbital spectra of C(1s) shifted from 284 to 286, eV for nitrogen flow increased from 70 to 130, sccm. In the present paper, an attempt has been made to synthesize nitrogen incorporated DLC films using thermal chemical vapor deposition technique to study their structural and microstructural properties.",

author = "Ghadai, \{Ranjan Kr\} and Soham Das and Mondal, \{Subhash Chandra\} and Swain, \{Bibhu Prasad\}",

note = "Publisher Copyright: {\textcopyright} Springer Nature Singapore Pte Ltd. 2018.; International Conference on Emerging Trends and Advances in Electrical Engineering and Renewable Energy, ETAEERE 2016 ; Conference date: 17-12-2016 Through 18-12-2016",

year = "2018",

doi = "10.1007/978-981-10-4765-7\_31",

language = "English",

isbn = "9789811047640",

series = "Lecture Notes in Electrical Engineering",

publisher = "Springer Verlag",

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Ghadai, RK, Das, S, Mondal, SC & Swain, BP 2018, Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films. in S Das, A Kalam & K Sharma (eds), Advances in Electronics, Communication and Computing - ETAEERE 2016. Lecture Notes in Electrical Engineering, vol. 443, Springer Verlag, pp. 301-306, International Conference on Emerging Trends and Advances in Electrical Engineering and Renewable Energy, ETAEERE 2016, Majhitar, India, 17-12-16. https://doi.org/10.1007/978-981-10-4765-7_31

Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films. / Ghadai, Ranjan Kr; Das, Soham; Mondal, Subhash Chandra et al.
Advances in Electronics, Communication and Computing - ETAEERE 2016. ed. / Swagatam Das; Akhtar Kalam; Kalpana Sharma. Springer Verlag, 2018. p. 301-306 (Lecture Notes in Electrical Engineering; Vol. 443).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films

AU - Ghadai, Ranjan Kr

AU - Das, Soham

AU - Mondal, Subhash Chandra

AU - Swain, Bibhu Prasad

N1 - Publisher Copyright: © Springer Nature Singapore Pte Ltd. 2018.

PY - 2018

Y1 - 2018

N2 - Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by thermal chemical vapor deposition technique by varying the nitrogen flow rate at a constant C2H2 flow. The influence of nitrogen incorporation on the microstructure and structural electronic properties of N-DLC films were investigated by Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS). SEM images reveal the DLC nanoparticles formation and carbon nanowires formations for 70 and 130, sccm nitrogen flow rate respectively. The Raman spectra of N-DLC investigated D and G peaks at 1300 and 1600, cm−1 respectively. X-ray diffraction of N-DLC indicated the crystallite sizes 1.74 and 8.78, nm at different peak position. Due to nitrogen incorporation in DLC thin films the core orbital spectra of C(1s) shifted from 284 to 286, eV for nitrogen flow increased from 70 to 130, sccm. In the present paper, an attempt has been made to synthesize nitrogen incorporated DLC films using thermal chemical vapor deposition technique to study their structural and microstructural properties.

AB - Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by thermal chemical vapor deposition technique by varying the nitrogen flow rate at a constant C2H2 flow. The influence of nitrogen incorporation on the microstructure and structural electronic properties of N-DLC films were investigated by Raman spectroscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS). SEM images reveal the DLC nanoparticles formation and carbon nanowires formations for 70 and 130, sccm nitrogen flow rate respectively. The Raman spectra of N-DLC investigated D and G peaks at 1300 and 1600, cm−1 respectively. X-ray diffraction of N-DLC indicated the crystallite sizes 1.74 and 8.78, nm at different peak position. Due to nitrogen incorporation in DLC thin films the core orbital spectra of C(1s) shifted from 284 to 286, eV for nitrogen flow increased from 70 to 130, sccm. In the present paper, an attempt has been made to synthesize nitrogen incorporated DLC films using thermal chemical vapor deposition technique to study their structural and microstructural properties.

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M3 - Conference contribution

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SN - 9789811047640

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BT - Advances in Electronics, Communication and Computing - ETAEERE 2016

A2 - Das, Swagatam

A2 - Kalam, Akhtar

A2 - Sharma, Kalpana

PB - Springer Verlag

T2 - International Conference on Emerging Trends and Advances in Electrical Engineering and Renewable Energy, ETAEERE 2016

Y2 - 17 December 2016 through 18 December 2016

ER -

Investigation of structural and electronic environments of nitrogen-doped CVD-grown DLC films

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