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Investigation of temperature dependent threshold voltage variation of Gd
2
O
3
/AlGaN/GaN metal-oxide-semiconductor heterostructure
Atanu Das
, Liann Be Chang
*
, Ray Ming Lin
*
Corresponding author for this work
Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal
Research output
:
Contribution to journal
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Article
›
peer-review
15
Citations (Scopus)
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2
O
3
/AlGaN/GaN metal-oxide-semiconductor heterostructure'. Together they form a unique fingerprint.
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Material Science
Metal Oxide
100%
Heterojunction
100%
Oxide Semiconductor
100%
Oxide Compound
100%
Capacitance
50%
Density
50%
Dielectric Material
50%
Engineering
Electron Capture
100%
Poole-Frenkel Emission
50%
INIS
electron capture
33%