TY - JOUR
T1 - Investigation on structural, optical and electrical properties of Zn doped indium oxide thin film for gamma dosimetry
AU - C, Aparna
AU - Shetty, Pramoda Kumara
AU - M G, Mahesha
N1 - Funding Information:
The authors are grateful to CIF MAHE Manipal, India; CSIF BITS PILANI K K Birla Goa Campus, India; DST PURSE Laboratory, Mangalore University, Mangalagangothri, India for extending characterization facilities. Ms Aparna also acknowledges the support received from the Department of Physics, Manipal Academy of Higher Education (MAHE) for providing the scholarship for research work and instrumentation facilities.
Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/7/1
Y1 - 2023/7/1
N2 - Zinc-doped indium oxide thin film was deposited on the glass substrate using the spray pyrolysis method at a substrate temperature of 723K for various Zn concentrations in the range of 2–10 at%. The obtained film confirmed a polycrystalline cubic structure with a shift in preferred growth orientation from (400) to (222) on higher doping levels. The morphological study also exhibited a microstructure change which corroborates with the XRD spectra. Moreover, surface morphology has a great influence on the physical properties of the film. Cubic crystallization of doped In2O3 with no impurity phase and the presence of oxygen vacancies is confirmed by Raman spectra. It also confirms the In substitution by Zn. Optical transmittance decreased with doping which is supported by a decrease in bandgap energy from 3.68 to 3.5. The Refractive index is estimated using three different models with the Herve-Vandamme model showing the least deviation. Urbach energy shows an inverse relation with energy band gaps. Violet-blue emission was observed in the photoluminescence spectra. Zn doping also had an influence on the electrical properties of the material. Thermoluminescence spectroscopy validates Zn-doped In2O3 films' suitability for gamma dosimetry. XPS peak intensity corresponds to oxygen vacancies observed to be higher for Zn doped sample relative to undoped, indicates the formation of defects after doping. The resistivity increased up to 6 at% and then decreased, which can be due to the preferred orientation change to (222) at higher dopant concentrations. From the investigation, it is concluded that 4% Zn doped In2O3 can be used for sensor applications due to its good structural, optical and electrical properties and also lesser defects.
AB - Zinc-doped indium oxide thin film was deposited on the glass substrate using the spray pyrolysis method at a substrate temperature of 723K for various Zn concentrations in the range of 2–10 at%. The obtained film confirmed a polycrystalline cubic structure with a shift in preferred growth orientation from (400) to (222) on higher doping levels. The morphological study also exhibited a microstructure change which corroborates with the XRD spectra. Moreover, surface morphology has a great influence on the physical properties of the film. Cubic crystallization of doped In2O3 with no impurity phase and the presence of oxygen vacancies is confirmed by Raman spectra. It also confirms the In substitution by Zn. Optical transmittance decreased with doping which is supported by a decrease in bandgap energy from 3.68 to 3.5. The Refractive index is estimated using three different models with the Herve-Vandamme model showing the least deviation. Urbach energy shows an inverse relation with energy band gaps. Violet-blue emission was observed in the photoluminescence spectra. Zn doping also had an influence on the electrical properties of the material. Thermoluminescence spectroscopy validates Zn-doped In2O3 films' suitability for gamma dosimetry. XPS peak intensity corresponds to oxygen vacancies observed to be higher for Zn doped sample relative to undoped, indicates the formation of defects after doping. The resistivity increased up to 6 at% and then decreased, which can be due to the preferred orientation change to (222) at higher dopant concentrations. From the investigation, it is concluded that 4% Zn doped In2O3 can be used for sensor applications due to its good structural, optical and electrical properties and also lesser defects.
UR - http://www.scopus.com/inward/record.url?scp=85151718839&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85151718839&partnerID=8YFLogxK
U2 - 10.1016/j.matchemphys.2023.127712
DO - 10.1016/j.matchemphys.2023.127712
M3 - Article
AN - SCOPUS:85151718839
SN - 0254-0584
VL - 302
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
M1 - 127712
ER -