Investigation on ZnTe/CdxZn1-xTe heterostructure for photodetector applications

Sahana Nagappa Moger, M. G. Mahesha

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11 Citations (Scopus)


ZnTe/CdxZn1-xTe (0.2 ≤ x ≤ 1.0) heterostructures were fabricated by thermal evaporation method by using CdTe and ZnTe as source materials. The properties of heterostructures were analysed by X-ray diffraction (XRD), photoluminescence (PL), temperature dependent Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and I-V characterizations. Double diffraction peak in the diffractogram has confirmed bilayer with no or minimum diffusion across the junction. Effect of thermal expansion and an-harmonic coupling to the other phonon modes causing strain induced shift of the longitudinal optical modes were studied through low-temperature Raman spectra. The junction parameters such as barrier height, ideality factor and series resistance were extracted from I - V characteristics by applying various models. ZnTe/CdxZn1-xTe heterostructures having low barrier height and good photo response are explored in this work for the photodetector application. Sample having composition x = 0.8 showed higher response in the visible region with improved response at longer wavelengths.

Original languageEnglish
Article number112294
JournalSensors and Actuators, A: Physical
Publication statusPublished - 01-11-2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering


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