Investigations on Bi Doped Cu2Se Prepared by Solid State Reaction Technique for Thermoelectric Applications

Chaithanya Purushottam Bhat; Anusha; Aninamol Ani; U. Deepika Shanubhogue; P. Poornesh; Ashok Rao; Saikat Chattopadhyay

doi:10.3390/en16073010

Investigations on Bi Doped Cu₂Se Prepared by Solid State Reaction Technique for Thermoelectric Applications

Chaithanya Purushottam Bhat
, Anusha
, Aninamol Ani
, U. Deepika Shanubhogue
, P. Poornesh^*
, Ashok Rao
, Saikat Chattopadhyay

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The influence of Bi doping on the structural and thermoelectric properties of Cu₂Se is presented in this work. Cu_2−xBi_xSe (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu_2−xBi_xSe samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu_2−xBi_xSe sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu_2−xBi_xSe samples. At 700 K, the Cu_1.988Bi_0.012Se sample has the highest power factor of 1474 μWm⁻¹K⁻², showing great potential in developing high-performance Cu₂Se based thermoelectric materials.

Original language	English
Article number	3010
Journal	Energies
Volume	16
Issue number	7
DOIs	https://doi.org/10.3390/en16073010
Publication status	Published - 04-2023

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
Building and Construction
Fuel Technology
Engineering (miscellaneous)
Energy Engineering and Power Technology
Energy (miscellaneous)
Control and Optimization
Electrical and Electronic Engineering

Access to Document

10.3390/en16073010

Cite this

@article{96222bf87db84dd490f9641fc82fcb06,

title = "Investigations on Bi Doped Cu2Se Prepared by Solid State Reaction Technique for Thermoelectric Applications",

abstract = "The influence of Bi doping on the structural and thermoelectric properties of Cu2Se is presented in this work. Cu2−xBixSe (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu2−xBixSe samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu2−xBixSe sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu2−xBixSe samples. At 700 K, the Cu1.988Bi0.012Se sample has the highest power factor of 1474 μWm−1K−2, showing great potential in developing high-performance Cu2Se based thermoelectric materials.",

author = "\{Purushottam Bhat\}, Chaithanya and Anusha and Aninamol Ani and Shanubhogue, \{U. Deepika\} and P. Poornesh and Ashok Rao and Saikat Chattopadhyay",

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doi = "10.3390/en16073010",

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journal = "Energies",

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T1 - Investigations on Bi Doped Cu2Se Prepared by Solid State Reaction Technique for Thermoelectric Applications

AU - Purushottam Bhat, Chaithanya

AU - Anusha,

AU - Ani, Aninamol

AU - Shanubhogue, U. Deepika

AU - Poornesh, P.

AU - Rao, Ashok

AU - Chattopadhyay, Saikat

PY - 2023/4

Y1 - 2023/4

N2 - The influence of Bi doping on the structural and thermoelectric properties of Cu2Se is presented in this work. Cu2−xBixSe (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu2−xBixSe samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu2−xBixSe sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu2−xBixSe samples. At 700 K, the Cu1.988Bi0.012Se sample has the highest power factor of 1474 μWm−1K−2, showing great potential in developing high-performance Cu2Se based thermoelectric materials.

AB - The influence of Bi doping on the structural and thermoelectric properties of Cu2Se is presented in this work. Cu2−xBixSe (x = 0.00, 0.004, 0.008, 0.012) samples were prepared using conventional solid-state reaction techniques. According to room temperature XRD results, Cu2−xBixSe samples have a monoclinic crystal structure. Doping Bi to the Cu site acts as a donor, lowering the hole concentration, except for the sample with x = 0.004. The resistivity of the Cu2−xBixSe sample increases with an increase in Bi content. Seebeck coefficient data confirm that the holes are the charge carriers in Cu2−xBixSe samples. At 700 K, the Cu1.988Bi0.012Se sample has the highest power factor of 1474 μWm−1K−2, showing great potential in developing high-performance Cu2Se based thermoelectric materials.

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