TY - JOUR
T1 - Investigations on optical behavior of Crystalline-Ge 2 Sb 2 Te 5 for photo-detection application in near infra-red region
AU - Srivastava, Vibhu
AU - Tolani, Manoj
AU - Sunny,
N1 - Funding Information:
This work is sponsored by Science and Engineering Research Board (SERB), Department of Science and Technology, Govt. of India under Early Career Research (ECR) award scheme with project File no. ECR/2016/001950 .
Funding Information:
This work is sponsored by Science and Engineering Research Board (SERB), Department of Science and Technology, Govt. of India under Early Career Research (ECR) award scheme with project File no. ECR/2016/001950.
Publisher Copyright:
© 2019 Elsevier Ltd
PY - 2019/6
Y1 - 2019/6
N2 - Present work reveals the investigations done on crystalline Ge 2 Sb 2 Te 5 (c-GST) based vertical photodetector for telecommunication wavelength (1550 nm) by optimizing the device dimensions on Silicon platform. Simulation studies done for the optimized structure reveal that the c-GST can be the promising material for the photo-detection applications. In our investigations, ∼210 nm is found to be the optimized thickness for c-GST with highest ∼63 A/W responsivity at 1150 nm when integrated on a single mode silicon-on-insulator (SOI) waveguide. The responsivity of ∼41 A/W is observed at 1550 nm of wavelength. A comparative analysis is also done with the amorphous GST (a-GST). A shift of 100 nm wavelength towards the higher side is observed for c-GST which may be due to its lower bandgap. Minimum detectable power (P min ) and noise equivalent power (NEP) of the proposed device is calculated and found to be 0.19 μW and 28.76 fW/Hz 1/2 at 43.1 THz bandwidth, respectively.
AB - Present work reveals the investigations done on crystalline Ge 2 Sb 2 Te 5 (c-GST) based vertical photodetector for telecommunication wavelength (1550 nm) by optimizing the device dimensions on Silicon platform. Simulation studies done for the optimized structure reveal that the c-GST can be the promising material for the photo-detection applications. In our investigations, ∼210 nm is found to be the optimized thickness for c-GST with highest ∼63 A/W responsivity at 1150 nm when integrated on a single mode silicon-on-insulator (SOI) waveguide. The responsivity of ∼41 A/W is observed at 1550 nm of wavelength. A comparative analysis is also done with the amorphous GST (a-GST). A shift of 100 nm wavelength towards the higher side is observed for c-GST which may be due to its lower bandgap. Minimum detectable power (P min ) and noise equivalent power (NEP) of the proposed device is calculated and found to be 0.19 μW and 28.76 fW/Hz 1/2 at 43.1 THz bandwidth, respectively.
UR - https://www.scopus.com/pages/publications/85064037944
UR - https://www.scopus.com/inward/citedby.url?scp=85064037944&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2019.04.004
DO - 10.1016/j.spmi.2019.04.004
M3 - Article
AN - SCOPUS:85064037944
SN - 0749-6036
VL - 130
SP - 1
EP - 11
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
ER -