Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands

A. Khan; A. Das

doi:10.1007/s00339-007-4160-0

Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands

A. Khan^*
, A. Das

^*Corresponding author for this work

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A formula for carrier concentration, and a relationship between mobility and diffusivity, have been presented for degenerate semiconductors with a nonparabolic energy band structure under the influence of a magnetic field. The relationships are general; they involve no approximation related to the comparative values of energy bandgap and spin orbit coupling. They should therefore, be applicable to both non-degenerate and degenerate semiconductors. They are quite suitable for the investigation of electrical transport in heavily doped semiconductors under the influence of a magnetic field.

Original language	English
Pages (from-to)	695-699
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	89
Issue number	3
DOIs	https://doi.org/10.1007/s00339-007-4160-0
Publication status	Published - 11-2007

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science

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10.1007/s00339-007-4160-0

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abstract = "A formula for carrier concentration, and a relationship between mobility and diffusivity, have been presented for degenerate semiconductors with a nonparabolic energy band structure under the influence of a magnetic field. The relationships are general; they involve no approximation related to the comparative values of energy bandgap and spin orbit coupling. They should therefore, be applicable to both non-degenerate and degenerate semiconductors. They are quite suitable for the investigation of electrical transport in heavily doped semiconductors under the influence of a magnetic field.",

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AB - A formula for carrier concentration, and a relationship between mobility and diffusivity, have been presented for degenerate semiconductors with a nonparabolic energy band structure under the influence of a magnetic field. The relationships are general; they involve no approximation related to the comparative values of energy bandgap and spin orbit coupling. They should therefore, be applicable to both non-degenerate and degenerate semiconductors. They are quite suitable for the investigation of electrical transport in heavily doped semiconductors under the influence of a magnetic field.

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Magnetic quantization of the energy states in heavily doped semiconductors with nonparabolic energy bands

Abstract

All Science Journal Classification (ASJC) codes

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