Material processing, performance and reliability of MoS₂ field effect transistor (FET) technology- A critical review

-In last the decade, Molybdenum-di-sulphide (MoS₂) based field effect transistors (FETs) combined with the advancements in integrated circuit (IC) technology have found versatile applications ranging from detection of nano-metric biomolecules to high performance computing. Compared to conventional Silicon and its derivatives based devices, transistors realized with MoS₂ depict better characteristics due to high I_ON/I_OFF ratio, low power consumption, relatively better sub-threshold swing (SS), non-zero bandgap, flexibility to cite a few. Aforementioned parameters make MoS₂ transistor technology not only suitable for realizing low power, high performance electronics systems but also sensing modules for detecting various physical, chemical and biological entities and displays. In recent times, numerous researchers have reported the potential of MoS₂ transistor technology for wide applications. In this work, we critically review the recent advancements in the field of MoS₂ transistor technology focussing on MoS₂ as channel material. Further, MoS₂ transistor operation for various configurations along with their IV characteristics is discussed in depth. Apart from MoS₂ transistor operation, the wide range of applications of MoS₂ transistor technology along with its limitations that restricts its performance is elucidated. In addition, this article also explains about the various challenges in engineering MoS₂ transistors as a futuristic technology. This review articles will serve as a guideline for device engineers to better understand the MoS₂ transistor technology.