TY - JOUR
T1 - Mixed phase formation of SnS-SnO2 on air-annealed thermally evaporated SnS thin films
AU - Jain, Deepti
AU - Jain, Garima
AU - Pal, Anand
AU - Agarwal, Shashwat
AU - Kumar, Sanjeev
N1 - Funding Information:
The authors would like to acknowledge the invaluable assistance of IIT Roorkee and MNIT Jaipur, who provided characterization facilities. Special thanks go to Dr. Beerpal of the Department of Physics at C.C.S. University, Meerut, for supporting UV–VIS characterization.
Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/9/1
Y1 - 2023/9/1
N2 - The present study examined the influence of annealing temperature on structural, morphological, electrical, and optical properties of thermally evaporated tin sulfide (SnS) thin films. The annealing of the prepared thin films has been carried out in the ambient atmosphere at a temperature between 100 and 300 °C. Structural, Optical, and compositional investigation has been performed using various characterization techniques. The X-ray diffraction pattern exhibits the mixed phase of SnS-SnO2 for the annealed films, ascribed to the reaction of SnS with atmospheric oxygen. A band gap in the 1.7–1.94 eV range was estimated from the Tauc-plots for all the films under investigation. The stoichiometric composition ratio of Sn/S=1.0 was obtained for the as-evaporated films. However, it deviates from the air-annealed SnS thin films. The air-annealed SnS thin films exhibit resistivity, carrier concentration and mobility in the range of 5.03–17.7 Ω-cm, 1.48 × 1018 – 2.18 × 1018 cm−3, and 0.04–1.05 cm2/V-s, respectively. The acquired results from this study elucidate the phase conversion of SnS thin films annealed in an ambient atmosphere. The current study aims to find an optimal absorber layer to enhance photovoltaic device performance.
AB - The present study examined the influence of annealing temperature on structural, morphological, electrical, and optical properties of thermally evaporated tin sulfide (SnS) thin films. The annealing of the prepared thin films has been carried out in the ambient atmosphere at a temperature between 100 and 300 °C. Structural, Optical, and compositional investigation has been performed using various characterization techniques. The X-ray diffraction pattern exhibits the mixed phase of SnS-SnO2 for the annealed films, ascribed to the reaction of SnS with atmospheric oxygen. A band gap in the 1.7–1.94 eV range was estimated from the Tauc-plots for all the films under investigation. The stoichiometric composition ratio of Sn/S=1.0 was obtained for the as-evaporated films. However, it deviates from the air-annealed SnS thin films. The air-annealed SnS thin films exhibit resistivity, carrier concentration and mobility in the range of 5.03–17.7 Ω-cm, 1.48 × 1018 – 2.18 × 1018 cm−3, and 0.04–1.05 cm2/V-s, respectively. The acquired results from this study elucidate the phase conversion of SnS thin films annealed in an ambient atmosphere. The current study aims to find an optimal absorber layer to enhance photovoltaic device performance.
UR - https://www.scopus.com/pages/publications/85165912463
UR - https://www.scopus.com/pages/publications/85165912463#tab=citedBy
U2 - 10.1016/j.tsf.2023.139973
DO - 10.1016/j.tsf.2023.139973
M3 - Article
AN - SCOPUS:85165912463
SN - 0040-6090
VL - 780
JO - Thin Solid Films
JF - Thin Solid Films
M1 - 139973
ER -
