Modeling of 1S-1R crossbar array with Ti-doped VO₂-based selector device

This article proposes a Ti-doped Vanadium dioxide (VO₂) selector device for reducing the leakage current. Here, TiO₂ is formed by the Ti atoms in the VO₂ film for acting like a good insulator. Hence, it reduces the integration density when the leakage current in a Cross Bar Array (CBA) is increased. In this article, the modeled Pt/Ti-doped VO₂/Pt selector device is integrated with the resistive random-access memory model to demonstrate its effectiveness on sneak path current reduction. The (Formula presented.) ratio of the suggested Ti-doped VO₂ selector is higher than (Formula presented.) The simulated results outputs in terms of nonlinearity (∼ (Formula presented.)), current density (∼ (Formula presented.)), and leakage current(∼0.31nA).