TY - JOUR
T1 - Modulating the Properties of SnO2 Thin Film by Post-Deposition UV-Ozone Treatment
AU - Pramitha, A.
AU - Rao, Srijana G.
AU - Raviprakash, Y.
N1 - Funding Information:
The authors, Ms Pramitha A and Ms Srijana G Rao, would like to thank the Manipal Academy of Higher Education (MAHE) for the support to carry out this work by providing necessary research and library facilities.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/12
Y1 - 2023/12
N2 - Tin(IV) oxide (SnO2) is a metal oxide renowned for its excellent optoelectronic properties. With the use of simple post-processing methods, the characteristics of SnO2 may be easily modified. In the current work, SnO2 thin films were prepared using the spray pyrolysis technique and were subjected to post-UV-ozone (UVO) treatment for different durations. Characterization techniques including x-ray diffraction, Raman spectroscopy, scanning electron microscopy, energy-dispersive spectroscopy, UV–visible spectroscopy, and photoluminescence spectroscopy were employed to assess the effects of UVO treatment. It was found that UVO treatment had no significant impact on the film's structural characteristics. However, after exposure to UVO, the bandgap was seen to decrease from 3.04 eV to 2.84 eV. Also, photoluminescence investigations revealed that UVO treatment increased the defects in the films with a decrease in the ratio between band-to-band emission and defect emissions. The results indicate that UVO treatment is an effective strategy for tuning the optical properties of SnO2 thin films by precisely managing the bandgap.
AB - Tin(IV) oxide (SnO2) is a metal oxide renowned for its excellent optoelectronic properties. With the use of simple post-processing methods, the characteristics of SnO2 may be easily modified. In the current work, SnO2 thin films were prepared using the spray pyrolysis technique and were subjected to post-UV-ozone (UVO) treatment for different durations. Characterization techniques including x-ray diffraction, Raman spectroscopy, scanning electron microscopy, energy-dispersive spectroscopy, UV–visible spectroscopy, and photoluminescence spectroscopy were employed to assess the effects of UVO treatment. It was found that UVO treatment had no significant impact on the film's structural characteristics. However, after exposure to UVO, the bandgap was seen to decrease from 3.04 eV to 2.84 eV. Also, photoluminescence investigations revealed that UVO treatment increased the defects in the films with a decrease in the ratio between band-to-band emission and defect emissions. The results indicate that UVO treatment is an effective strategy for tuning the optical properties of SnO2 thin films by precisely managing the bandgap.
UR - https://www.scopus.com/pages/publications/85172886271
UR - https://www.scopus.com/inward/citedby.url?scp=85172886271&partnerID=8YFLogxK
U2 - 10.1007/s11664-023-10726-x
DO - 10.1007/s11664-023-10726-x
M3 - Article
AN - SCOPUS:85172886271
SN - 0361-5235
VL - 52
SP - 8124
EP - 8131
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 12
ER -