TY - JOUR
T1 - N-ion implantation of micro-nanocrystalline duplex structured diamond films for enhancing their electron field emission properties
AU - Panda, Kalpataru
AU - Sundaravel, Balakrishanan
AU - Cheng, Hsiu Fung
AU - Horng, Chuang Chi
AU - Chiang, Horng Yi
AU - Chen, Huang Chin
AU - Lin, I. Nan
PY - 2013/8/15
Y1 - 2013/8/15
N2 - The improvement on the electron field emission (EFE) properties of duplex-structured diamond films by N-ion implantation/post-annealing processes was investigated. The duplex-structured diamond films were synthesized by a two-step microwave plasma enhanced CVD process. Transmission electron microscopy (TEM) examinations reveal that all the as-prepared, N-ion implanted and post-annealed diamond films contained large microcrystalline-diamond (MCD) aggregates sparsely distributed among the matrix of ultra-small diamond grains. While the granular structure of the MCD aggregates was insignificantly modified due to the N-ion implantation/post-annealing processes, that of the UNCD regions was markedly altered. The EFE process for the MCD/UNCD films can be turned on at (E0)MCD/UNCD=8.21V/μm, which is even smaller than the E0-field for the UNCD films ((E0)UNCD=13.34V/μm). These N-ion implanted/post-annealed diamond films attained an EFE current density of (Je)MCD/UNCD=0.4mA/cm2 at an applied field of 20.0V/μm that is even larger than the Je-value for the UNCD films ((Je)UNCD<0.05mA/cm2 at the same applied field). Presumably, the enhanced EFE properties are resulted from the presence of nano-graphites in the small-grain region of MCD/UNCD films that form an interconnected path, facilitating the transport of electrons.
AB - The improvement on the electron field emission (EFE) properties of duplex-structured diamond films by N-ion implantation/post-annealing processes was investigated. The duplex-structured diamond films were synthesized by a two-step microwave plasma enhanced CVD process. Transmission electron microscopy (TEM) examinations reveal that all the as-prepared, N-ion implanted and post-annealed diamond films contained large microcrystalline-diamond (MCD) aggregates sparsely distributed among the matrix of ultra-small diamond grains. While the granular structure of the MCD aggregates was insignificantly modified due to the N-ion implantation/post-annealing processes, that of the UNCD regions was markedly altered. The EFE process for the MCD/UNCD films can be turned on at (E0)MCD/UNCD=8.21V/μm, which is even smaller than the E0-field for the UNCD films ((E0)UNCD=13.34V/μm). These N-ion implanted/post-annealed diamond films attained an EFE current density of (Je)MCD/UNCD=0.4mA/cm2 at an applied field of 20.0V/μm that is even larger than the Je-value for the UNCD films ((Je)UNCD<0.05mA/cm2 at the same applied field). Presumably, the enhanced EFE properties are resulted from the presence of nano-graphites in the small-grain region of MCD/UNCD films that form an interconnected path, facilitating the transport of electrons.
UR - https://www.scopus.com/pages/publications/84879797279
UR - https://www.scopus.com/pages/publications/84879797279#tab=citedBy
U2 - 10.1016/j.surfcoat.2012.05.107
DO - 10.1016/j.surfcoat.2012.05.107
M3 - Article
AN - SCOPUS:84879797279
SN - 0257-8972
VL - 228
SP - S331-S335
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
IS - SUPPL.1
ER -