n-Type naphthalimide-indole derivative for electronic applications

Yogeesh Mjp, Sneha Kagatikar, Dhanya Sunil, Dhananjaya Kekuda

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1 Citation (Scopus)


The fabrication of diodes using organic semiconductors as active materials has gained wide interest, and has undergone significant progress in the past few decades. A naphthalimide-indole derivative (BNIA) was synthesized through bromination of acenaphthene, subsequent oxidation, and finally imidation with indole-3-acetic anhydride. The molecular structure was characterized using NMR and IR spectroscopy. The BNIA displayed good thermal stability up to 300 °C and an electrochemical band gap of 1.07 eV. The theoretical studies were performed to support the experimental findings. The electrical parameter values and the dielectric measurement studies directed towards the suitability of BNIA as a functional material in electronic devices. A diode was successfully constructed using BNIA as the n-type material with an ideality factor of 8.13, and the electrical parameters are analyzed.

Original languageEnglish
Article number334
JournalJournal of Materials Science: Materials in Electronics
Issue number4
Publication statusPublished - 02-2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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