TY - JOUR
T1 - n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region
AU - Ganesha Krishna, V. S.
AU - Mahesha, M. G.
N1 - Funding Information:
Ganesha Krishna V S is thankful to Department of Science and Technology (DST), Govt. of India for providing INSPIRE fellowship through grant number IF190268. The authors are thankful to Dr. Sudha D Kamath, Department of Physics, Manipal Institute of Technology, for extending the PL spectroscopy facility.
Funding Information:
Ganesha Krishna V S is thankful to Department of Science and Technology (DST), Govt. of India for providing INSPIRE fellowship through grant number IF190268 .
Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/12/1
Y1 - 2021/12/1
N2 - In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption
AB - In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption
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U2 - 10.1016/j.sna.2021.113169
DO - 10.1016/j.sna.2021.113169
M3 - Article
AN - SCOPUS:85117415428
SN - 0924-4247
VL - 332
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
M1 - 113169
ER -