n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

V. S. Ganesha Krishna; M. G. Mahesha

doi:10.1016/j.sna.2021.113169

n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

V. S. Ganesha Krishna
, M. G. Mahesha^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption

Original language	English
Article number	113169
Journal	Sensors and Actuators A: Physical
Volume	332
DOIs	https://doi.org/10.1016/j.sna.2021.113169
Publication status	Published - 01-12-2021

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

Access to Document

10.1016/j.sna.2021.113169

Cite this

@article{415338d4171d4e10aa988afe8f51d9ad,

title = "n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region",

abstract = "In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption",

author = "\{Ganesha Krishna\}, \{V. S.\} and Mahesha, \{M. G.\}",

note = "Funding Information: Ganesha Krishna V S is thankful to Department of Science and Technology (DST), Govt. of India for providing INSPIRE fellowship through grant number IF190268. The authors are thankful to Dr. Sudha D Kamath, Department of Physics, Manipal Institute of Technology, for extending the PL spectroscopy facility. Funding Information: Ganesha Krishna V S is thankful to Department of Science and Technology (DST), Govt. of India for providing INSPIRE fellowship through grant number IF190268 . Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = dec,

day = "1",

doi = "10.1016/j.sna.2021.113169",

language = "English",

volume = "332",

journal = "Sensors and Actuators A: Physical",

issn = "0924-4247",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

AU - Ganesha Krishna, V. S.

AU - Mahesha, M. G.

N1 - Funding Information: Ganesha Krishna V S is thankful to Department of Science and Technology (DST), Govt. of India for providing INSPIRE fellowship through grant number IF190268. The authors are thankful to Dr. Sudha D Kamath, Department of Physics, Manipal Institute of Technology, for extending the PL spectroscopy facility. Funding Information: Ganesha Krishna V S is thankful to Department of Science and Technology (DST), Govt. of India for providing INSPIRE fellowship through grant number IF190268 . Publisher Copyright: © 2021 Elsevier B.V.

PY - 2021/12/1

Y1 - 2021/12/1

N2 - In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption

AB - In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, λ = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption

UR - https://www.scopus.com/pages/publications/85117415428

UR - https://www.scopus.com/pages/publications/85117415428#tab=citedBy

U2 - 10.1016/j.sna.2021.113169

DO - 10.1016/j.sna.2021.113169

M3 - Article

AN - SCOPUS:85117415428

SN - 0924-4247

VL - 332

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

M1 - 113169

ER -

n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this