INIS
thin films
100%
zinc oxides
100%
films
100%
phase transformations
100%
lasers
100%
polarization
100%
doped materials
100%
ablation
100%
ferroelectric materials
100%
substrates
50%
oxygen
25%
concentration
25%
spectroscopy
25%
temperature range 0273-0400 k
25%
voltage
25%
capacitance
25%
transition temperature
25%
platinum
25%
silicon
25%
impedance
25%
partial pressure
25%
dielectrics
25%
activation energy
25%
hysteresis
25%
preferred orientation
25%
Material Science
Film
100%
ZnO
100%
Laser Ablation
100%
Ferroelectric Material
100%
Thin Films
100%
Capacitance
25%
Platinum
25%
Activation Energy
25%
Dielectric Spectroscopy
25%
Silicon
25%
Dielectric Material
25%
Engineering
Pulsed Laser Ablation
100%
Thin Films
100%
Silicon Substrate
33%
Substrate Temperature
33%
Dielectrics
33%
Hysteresis Loop
33%
Coercive Field
33%
Room Temperature
33%
Partial Pressure
33%
Activation Energy
33%
Preferred Orientation
33%
Phase Transition Temperature
33%