Ohmic Junction Based Tunnel FET for High Frequency and Low Power Applications

In this paper, for improving DC and RF performance of conventional charge plasma TFET (CP-TFET) an Ohmic junction has been introduced with intention of merging the concept of interband tunneling with thermionic emission. This philosophy successfully enhances the DC and high-frequency parameters in ohmic junction charge plasma TFET (OCP- TFET). Further, for suppressing negative conductance and leakage current drain underlap and gate work-function engineering is implemented in the final proposal respectively. Drain underlap is a reason for wider tunneling width at drain/channel interface by misaligning energy bands and gate work function engineering is responsible for the formation of quantum well just above the Ohmic junction. Therefore, both techniques with ohmic junction improve the overall performance of CP-TFET as a final state of the art.