On the high-energy electron beam irradiation-induced defects in Cu2SnSe3 system: an effort towards modifying the structure, microstructure, and thermoelectric transport

K. Gurukrishna, Suraj Mangavati, Ashok Rao, P. Poornesh, Vikash Chandra Petwal, Vijay Pal Verma, Jishnu Dwivedi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We present report on modulating thermoelectric transport in Cu2SnSe3 system via irradiating high-energy electrons of energy of about 8 MeV. Electrical transport is investigated at near room to mid-temperature regime (300–700 K). A smooth transition from degenerate to non-degenerate type of conductivity is observed in all the samples, which indicates the injection of minority carriers with ionisation of defects at high temperatures. Defects created through the knock-on displacement of the constituent atoms is successful in promoting the power factor in the material. Cu2SnSe3 irradiated with 50 kGy is found to achieve highest power factor of 228 µW/mK2 at 700 K, which is nearly 20% higher than the power factor of pristine material at the same temperature.

Original languageEnglish
Pages (from-to)22270-22280
Number of pages11
JournalJournal of Materials Science: Materials in Electronics
Volume33
Issue number28
DOIs
Publication statusPublished - 10-2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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