TY - JOUR
T1 - On the high-energy electron beam irradiation-induced defects in Cu2SnSe3 system
T2 - an effort towards modifying the structure, microstructure, and thermoelectric transport
AU - Gurukrishna, K.
AU - Mangavati, Suraj
AU - Rao, Ashok
AU - Poornesh, P.
AU - Petwal, Vikash Chandra
AU - Verma, Vijay Pal
AU - Dwivedi, Jishnu
N1 - Funding Information:
One of the authors (AR) acknowledges DST-FIST Grant (SR/FIST/PS-1/2017/8) and Council of Scientific and Industrial Research Grant [Sanction No.: 03(1409)/17/EMR-II] for the financial support required for this work.
Publisher Copyright:
© 2022, The Author(s).
PY - 2022/10
Y1 - 2022/10
N2 - We present report on modulating thermoelectric transport in Cu2SnSe3 system via irradiating high-energy electrons of energy of about 8 MeV. Electrical transport is investigated at near room to mid-temperature regime (300–700 K). A smooth transition from degenerate to non-degenerate type of conductivity is observed in all the samples, which indicates the injection of minority carriers with ionisation of defects at high temperatures. Defects created through the knock-on displacement of the constituent atoms is successful in promoting the power factor in the material. Cu2SnSe3 irradiated with 50 kGy is found to achieve highest power factor of 228 µW/mK2 at 700 K, which is nearly 20% higher than the power factor of pristine material at the same temperature.
AB - We present report on modulating thermoelectric transport in Cu2SnSe3 system via irradiating high-energy electrons of energy of about 8 MeV. Electrical transport is investigated at near room to mid-temperature regime (300–700 K). A smooth transition from degenerate to non-degenerate type of conductivity is observed in all the samples, which indicates the injection of minority carriers with ionisation of defects at high temperatures. Defects created through the knock-on displacement of the constituent atoms is successful in promoting the power factor in the material. Cu2SnSe3 irradiated with 50 kGy is found to achieve highest power factor of 228 µW/mK2 at 700 K, which is nearly 20% higher than the power factor of pristine material at the same temperature.
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U2 - 10.1007/s10854-022-09005-y
DO - 10.1007/s10854-022-09005-y
M3 - Article
AN - SCOPUS:85137495727
SN - 0957-4522
VL - 33
SP - 22270
EP - 22280
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 28
ER -