Oxygen plasma effects on indium oxide-based thin film transistors

Chao Feng Sung; Dhananjaya Dhananjay; Chih Wei Chu; Yuh Zheng Lee

Oxygen plasma effects on indium oxide-based thin film transistors

Chao Feng Sung^*
, Dhananjay
, Chih Wei Chu
, Yuh Zheng Lee

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

We have fabricated indium oxide (In₂O₃) thin film transistors (TFTs) fabricated by using reactive evaporation process. The performance of In₂O₃ TFTs was improved after plasma oxidation treatment. The In₂O₃ TFTs exhibits a mobility of 2.92 cm² V^-1 s^-1 and an I_on/I _off ratio of 10⁶.

Original language	English
Publication status	Published - 01-12-2009
Event	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan, Province of China Duration: 27-04-2009 → 30-04-2009

Conference

Conference	2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
Country/Territory	Taiwan, Province of China
City	Taipei
Period	27-04-09 → 30-04-09

All Science Journal Classification (ASJC) codes

Computer Graphics and Computer-Aided Design
Computer Science Applications
Human-Computer Interaction

Cite this

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title = "Oxygen plasma effects on indium oxide-based thin film transistors",

abstract = "We have fabricated indium oxide (In2O3) thin film transistors (TFTs) fabricated by using reactive evaporation process. The performance of In2O3 TFTs was improved after plasma oxidation treatment. The In2O3 TFTs exhibits a mobility of 2.92 cm2 V-1 s-1 and an Ion/I off ratio of 106.",

author = "Sung, \{Chao Feng\} and Dhananjay and Chu, \{Chih Wei\} and Lee, \{Yuh Zheng\}",

year = "2009",

month = dec,

day = "1",

language = "English",

note = "2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 ; Conference date: 27-04-2009 Through 30-04-2009",

}

Oxygen plasma effects on indium oxide-based thin film transistors. / Sung, Chao Feng; Dhananjay; Chu, Chih Wei et al.
2009. Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan, Province of China.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Oxygen plasma effects on indium oxide-based thin film transistors

AU - Sung, Chao Feng

AU - Dhananjay, null

AU - Chu, Chih Wei

AU - Lee, Yuh Zheng

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We have fabricated indium oxide (In2O3) thin film transistors (TFTs) fabricated by using reactive evaporation process. The performance of In2O3 TFTs was improved after plasma oxidation treatment. The In2O3 TFTs exhibits a mobility of 2.92 cm2 V-1 s-1 and an Ion/I off ratio of 106.

AB - We have fabricated indium oxide (In2O3) thin film transistors (TFTs) fabricated by using reactive evaporation process. The performance of In2O3 TFTs was improved after plasma oxidation treatment. The In2O3 TFTs exhibits a mobility of 2.92 cm2 V-1 s-1 and an Ion/I off ratio of 106.

UR - https://www.scopus.com/pages/publications/79952061314

UR - https://www.scopus.com/pages/publications/79952061314#tab=citedBy

M3 - Paper

AN - SCOPUS:79952061314

T2 - 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009

Y2 - 27 April 2009 through 30 April 2009

ER -

Oxygen plasma effects on indium oxide-based thin film transistors

Abstract

Conference

All Science Journal Classification (ASJC) codes

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