Parametric Study of a V-Team Memristor Model and Building its Application in Full Adder Circuits

Memristors, as fundamental passive circuit elements with non-volatile characteristics, have garnered significant interest for next-generation computing and storage systems. This paper evaluates memristor parameters using two well-established models: the Linear Ion Drift Model, the earliest representation of memristive behavior, and the Versatile Memristor Model (V-TEAM), an advanced framework capable of capturing a wide range of memristor characteristics [1]. By comparing these models, we analyze IV curves and hysteresis loops under varying voltage and frequency conditions. Furthermore, leveraging the VTEAM model [2], a memristor-based full adder circuit is designed and implemented for high-density, low-power logic applications. Highlighting advantages such as reduced circuit complexity, non-volatility, and energy efficiency, the proposed design positions memristor-based logic as a promising solution for neuromorphic and resistive computing systems. The insights from this study support the advancement of memristive devices in future memory and computing technologies.