TY - JOUR
T1 - Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer
AU - Kalita, Sanjib
AU - Awadhiya, Bhaskar
AU - Changmai, Papul
N1 - Publisher Copyright:
© 2023, The Author(s).
PY - 2023/6
Y1 - 2023/6
N2 - In this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to improve the DC and RF parameters of gallium nitride-based high electron mobility transistors (HEMT). To explore the characteristics, both graded and non-graded double heterojunction high electron mobility transistor (DH-HEMT) structures are optimized using SILVACO-ATLAS physical simulator. Enhanced DC and RF parameters have been observed in the optimized graded DH-HEMT. In this paper, we have also studied the development of the quantum wells at the AlGaN/GaN interfaces due to the conduction band discontinuity in both structures.
AB - In this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to improve the DC and RF parameters of gallium nitride-based high electron mobility transistors (HEMT). To explore the characteristics, both graded and non-graded double heterojunction high electron mobility transistor (DH-HEMT) structures are optimized using SILVACO-ATLAS physical simulator. Enhanced DC and RF parameters have been observed in the optimized graded DH-HEMT. In this paper, we have also studied the development of the quantum wells at the AlGaN/GaN interfaces due to the conduction band discontinuity in both structures.
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U2 - 10.1007/s00340-023-08042-7
DO - 10.1007/s00340-023-08042-7
M3 - Article
AN - SCOPUS:85160202341
SN - 0946-2171
VL - 129
JO - Applied Physics B: Lasers and Optics
JF - Applied Physics B: Lasers and Optics
IS - 6
M1 - 98
ER -