Performance estimation of non-hysteretic negative capacitance FinFET based SRAM

In this paper, a detailed evaluation of negative capacitance FinFET (NC-FinFET) based volatile static random access memory (6T-NCSRAM) is carried out by utilizing L-K equation for ferroelectric and calibrated BSIM-CMG model with 14 nm conventional FinFET to form NC-FinFET. Static and dynamic behavior of NC-FinFETs is explored and evaluated at different ferroelectric thickness. At supply voltage scaling, important SRAM performance metrics such as stability at different operation condition (hold, read and write mode) and standby leakage power were evaluated. When compared to traditional FinFET based SRAM, 6T-NCSRAM exhibits distinct behavior during low and high supply voltages. Moreover, the effect of wordline (WL) voltage pulse variation on 6T-NCSRAM is captured and minimum RC multiplier of 2RC is found to avoid functional failure of 6T-NCSRAM.