TY - JOUR
T1 - Performance evaluation of transparent self-powered n-ZnO/p-NiO heterojunction ultraviolet photosensors
AU - Salunkhe, Parashurama
AU - Bhat, Prashant
AU - Kekuda, Dhananjaya
N1 - Funding Information:
We would like to thank the Micro and Nano Characterization Facility (MNCF) at CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India, Indian Institute of Science (IISc), Bengaluru for the XPS characterization.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/10/1
Y1 - 2022/10/1
N2 - We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 105 at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm2. Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 1011 Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.
AB - We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 105 at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm2. Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 1011 Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.
UR - http://www.scopus.com/inward/record.url?scp=85135836278&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85135836278&partnerID=8YFLogxK
U2 - 10.1016/j.sna.2022.113799
DO - 10.1016/j.sna.2022.113799
M3 - Article
AN - SCOPUS:85135836278
SN - 0924-4247
VL - 345
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
M1 - 113799
ER -