We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 105 at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm2. Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 1011 Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering