Performance evaluation of transparent self-powered n-ZnO/p-NiO heterojunction ultraviolet photosensors

Parashurama Salunkhe; Prashant Bhat; Dhananjaya Kekuda

doi:10.1016/j.sna.2022.113799

Performance evaluation of transparent self-powered n-ZnO/p-NiO heterojunction ultraviolet photosensors

Parashurama Salunkhe
, Prashant Bhat
, Dhananjaya Kekuda^*

^*Corresponding author for this work

Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 10⁵ at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm². Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 10¹¹ Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.

Original language	English
Article number	113799
Journal	Sensors and Actuators A: Physical
Volume	345
DOIs	https://doi.org/10.1016/j.sna.2022.113799
Publication status	Published - 01-10-2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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title = "Performance evaluation of transparent self-powered n-ZnO/p-NiO heterojunction ultraviolet photosensors",

abstract = "We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 105 at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm2. Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 1011 Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.",

author = "Parashurama Salunkhe and Prashant Bhat and Dhananjaya Kekuda",

note = "Funding Information: We would like to thank the Micro and Nano Characterization Facility (MNCF) at CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India, Indian Institute of Science (IISc), Bengaluru for the XPS characterization. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

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AU - Salunkhe, Parashurama

AU - Bhat, Prashant

AU - Kekuda, Dhananjaya

N1 - Funding Information: We would like to thank the Micro and Nano Characterization Facility (MNCF) at CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India, Indian Institute of Science (IISc), Bengaluru for the XPS characterization. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/10/1

Y1 - 2022/10/1

N2 - We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 105 at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm2. Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 1011 Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.

AB - We have constructed NiO/ZnO thin film heterojunction diodes by dc magnetron sputtering technique and evaluated their performance for ultraviolet sensor applications. The constructed device configuration, ITO/ZnO/NiO/Ag exhibited excellent current-voltage rectifying characteristics in the order of 105 at room temperature. The effect of rapid thermal annealing treatment on the fabricated ITO/ZnO/NiO thin film stack was evaluated for their photodetector characteristics. The structural, optical, and spectroscopic properties were also investigated. Further, the ITO/ZnO/NiO/Ag diodes were tested under 365 nm UV light illumination having a power density of 0.06 mW/cm2. Remarkably, a speed of response with rise/fall time of 197.29/537.10 ms has been recorded at self-powered mode. Interestingly, the photodiode device has exhibited a spectral responsivity of 13.01 mA/W and stable photo detectivity of 5.66 × 1011 Jones at room temperature. The n-ZnO/p-NiO heterojunction photodetector has shown its ability to detect a faint UV light in a self-powered mode.

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Performance evaluation of transparent self-powered n-ZnO/p-NiO heterojunction ultraviolet photosensors

Abstract

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