Performance Optimization of Ge2Sb2Te5 Vertical Photodetector for Silicon Photonic Platform

Manoj Tolani; Vibhu Srivastava; Srinivas Talabattula; Virendra Singh; Sunny

doi:10.1109/WRAP59682.2023.10712848

Performance Optimization of Ge₂Sb₂Te₅ Vertical Photodetector for Silicon Photonic Platform

Manoj Tolani
, Vibhu Srivastava
, Srinivas Talabattula
, Virendra Singh
, Sunny

Manipal Institute of Technology, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In the present work, the design optimization of vertical photo detector is reported using amorphous Ge₂Sb₂Te₅ (a-GST) for silicon platform at telecommunication wavelength 1550 nm. The present work deals with the optimization of both a-GST as well as silicon layers. In the previously reported work, the researchers have optimized the performance only for optimal thickness of a-GST. However, in the present work, the performance of the device is verified for the optimal thickness of the silicon as well as a-GST. It is observed that the photodetector performs better for the lower thickness of the silicon layer for anode contact. However, the silicon thickness can't be reduced after some extent to avoid the metal-semiconductor-metal (MSM) design. The results prove the superiority of the proposed design which can be utilized for future device realization.

Original language	English
Title of host publication	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350340839
DOIs	https://doi.org/10.1109/WRAP59682.2023.10712848
Publication status	Published - 2023
Event	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 - Prayagraj, India Duration: 07-12-2023 → 09-12-2023

Publication series

Name	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023

Conference

Conference	2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023
Country/Territory	India
City	Prayagraj
Period	07-12-23 → 09-12-23

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/WRAP59682.2023.10712848

Cite this

Tolani, M., Srivastava, V., Talabattula, S., Singh, V., & Sunny (2023). Performance Optimization of Ge₂Sb₂Te₅ Vertical Photodetector for Silicon Photonic Platform. In 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 (2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WRAP59682.2023.10712848

@inproceedings{30898a66ad214219a0ae99ae2ecb8491,

title = "Performance Optimization of Ge2Sb2Te5 Vertical Photodetector for Silicon Photonic Platform",

abstract = "In the present work, the design optimization of vertical photo detector is reported using amorphous Ge2Sb2Te5 (a-GST) for silicon platform at telecommunication wavelength 1550 nm. The present work deals with the optimization of both a-GST as well as silicon layers. In the previously reported work, the researchers have optimized the performance only for optimal thickness of a-GST. However, in the present work, the performance of the device is verified for the optimal thickness of the silicon as well as a-GST. It is observed that the photodetector performs better for the lower thickness of the silicon layer for anode contact. However, the silicon thickness can't be reduced after some extent to avoid the metal-semiconductor-metal (MSM) design. The results prove the superiority of the proposed design which can be utilized for future device realization.",

author = "Manoj Tolani and Vibhu Srivastava and Srinivas Talabattula and Virendra Singh and Sunny",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023 ; Conference date: 07-12-2023 Through 09-12-2023",

year = "2023",

doi = "10.1109/WRAP59682.2023.10712848",

language = "English",

series = "2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023",

address = "United States",

}

Tolani, M, Srivastava, V, Talabattula, S, Singh, V & Sunny 2023, Performance Optimization of Ge₂Sb₂Te₅ Vertical Photodetector for Silicon Photonic Platform. in 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023. 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023, Prayagraj, India, 07-12-23. https://doi.org/10.1109/WRAP59682.2023.10712848

Performance Optimization of Ge₂Sb₂Te₅ Vertical Photodetector for Silicon Photonic Platform. / Tolani, Manoj; Srivastava, Vibhu; Talabattula, Srinivas et al.
2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Performance Optimization of Ge2Sb2Te5 Vertical Photodetector for Silicon Photonic Platform

AU - Tolani, Manoj

AU - Srivastava, Vibhu

AU - Talabattula, Srinivas

AU - Singh, Virendra

AU - Sunny,

PY - 2023

Y1 - 2023

N2 - In the present work, the design optimization of vertical photo detector is reported using amorphous Ge2Sb2Te5 (a-GST) for silicon platform at telecommunication wavelength 1550 nm. The present work deals with the optimization of both a-GST as well as silicon layers. In the previously reported work, the researchers have optimized the performance only for optimal thickness of a-GST. However, in the present work, the performance of the device is verified for the optimal thickness of the silicon as well as a-GST. It is observed that the photodetector performs better for the lower thickness of the silicon layer for anode contact. However, the silicon thickness can't be reduced after some extent to avoid the metal-semiconductor-metal (MSM) design. The results prove the superiority of the proposed design which can be utilized for future device realization.

AB - In the present work, the design optimization of vertical photo detector is reported using amorphous Ge2Sb2Te5 (a-GST) for silicon platform at telecommunication wavelength 1550 nm. The present work deals with the optimization of both a-GST as well as silicon layers. In the previously reported work, the researchers have optimized the performance only for optimal thickness of a-GST. However, in the present work, the performance of the device is verified for the optimal thickness of the silicon as well as a-GST. It is observed that the photodetector performs better for the lower thickness of the silicon layer for anode contact. However, the silicon thickness can't be reduced after some extent to avoid the metal-semiconductor-metal (MSM) design. The results prove the superiority of the proposed design which can be utilized for future device realization.

UR - https://www.scopus.com/pages/publications/85207938266

UR - https://www.scopus.com/pages/publications/85207938266#tab=citedBy

U2 - 10.1109/WRAP59682.2023.10712848

DO - 10.1109/WRAP59682.2023.10712848

M3 - Conference contribution

AN - SCOPUS:85207938266

T3 - 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023

BT - 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023

Y2 - 7 December 2023 through 9 December 2023

ER -

Tolani M, Srivastava V, Talabattula S, Singh V, Sunny. Performance Optimization of Ge₂Sb₂Te₅ Vertical Photodetector for Silicon Photonic Platform. In 2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE Workshop on Recent Advances in Photonics, WRAP 2023). doi: 10.1109/WRAP59682.2023.10712848