Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications

Md Akram Ahmad; Muzaffar Imam; Bhubon Chandra Mech; V. Bharath Sreenivasulu

doi:10.1038/s41598-025-21242-9

Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications

Md Akram Ahmad
, Muzaffar Imam
, Bhubon Chandra Mech^*
, V. Bharath Sreenivasulu

^*Corresponding author for this work

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Bengaluru

Research output: Contribution to journal › Article › peer-review

Abstract

This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (I_ON/I_OFF) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (A_V), transconductance generation factor (TGF), and cut-off frequency (f_T), are examined. The results demonstrate notable enhancements: transconductance (g_m) increases by 98.3%, TGF by 73.7%, and A_V by 72.66%. However, a 9.85% reduction in f_T is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.

Original language	English
Article number	9573
Journal	Scientific Reports
Volume	16
Issue number	1
DOIs	https://doi.org/10.1038/s41598-025-21242-9
Publication status	Published - 12-2026

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title = "Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications",

abstract = "This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green{\textquoteright}s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (ION/IOFF) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (AV), transconductance generation factor (TGF), and cut-off frequency (fT), are examined. The results demonstrate notable enhancements: transconductance (gm) increases by 98.3\%, TGF by 73.7\%, and AV by 72.66\%. However, a 9.85\% reduction in fT is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.",

author = "Ahmad, \{Md Akram\} and Muzaffar Imam and Mech, \{Bhubon Chandra\} and Sreenivasulu, \{V. Bharath\}",

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doi = "10.1038/s41598-025-21242-9",

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AU - Ahmad, Md Akram

AU - Imam, Muzaffar

AU - Mech, Bhubon Chandra

AU - Sreenivasulu, V. Bharath

N1 - Publisher Copyright: © The Author(s) 2025.

PY - 2026/12

Y1 - 2026/12

N2 - This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (ION/IOFF) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (AV), transconductance generation factor (TGF), and cut-off frequency (fT), are examined. The results demonstrate notable enhancements: transconductance (gm) increases by 98.3%, TGF by 73.7%, and AV by 72.66%. However, a 9.85% reduction in fT is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.

AB - This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism. Initially, the effect of high-k dielectrics on the ON/OFF current ratio (ION/IOFF) is analyzed to assess their suitability for digital applications. Subsequently, key analog and radio-frequency (RF) performance metrics, such as intrinsic gain (AV), transconductance generation factor (TGF), and cut-off frequency (fT), are examined. The results demonstrate notable enhancements: transconductance (gm) increases by 98.3%, TGF by 73.7%, and AV by 72.66%. However, a 9.85% reduction in fT is observed, indicating a trade-off between gain and speed. These findings highlight the potential of high-k dielectric engineering in optimizing InSe-based FETs for next-generation analog and RF circuits.

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Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications

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