Abstract
In the last few years, the development of ultra-low-power oxide electronics devices has been facilitated by abrupt, ultrafast, nanoscale switching caused by an insulator-to-metal transition in phase transition materials. These transitions, particularly those caused by electrical triggering, aid in the achievement of dimensional scaling at the lower technology node. The unique electrical properties of these materials can be used to create innovative devices and circuits for next-generation electronics. This chapter examines the history of the phase transition materials family, including its origin, history, modeling, and application in cutting-edge devices. There is a focus on various applications of phase transition material in low-power electronics, such as steep switching devices, digital circuits, memory, and non-Boolean computing.
| Original language | English |
|---|---|
| Title of host publication | Device Circuit Co-Design Issues in FETs |
| Publisher | CRC Press/Balkema |
| Pages | 123-142 |
| Number of pages | 20 |
| ISBN (Electronic) | 9781000926422 |
| ISBN (Print) | 9781032414256 |
| DOIs | |
| Publication status | Published - 01-01-2023 |
All Science Journal Classification (ASJC) codes
- General Engineering
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