Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

K. Gowrish Rao; Kasturi V. Bangera; G. K. Shivakumar

doi:10.1016/j.solidstatesciences.2011.08.017

Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

K. Gowrish Rao, Kasturi V. Bangera, G. K. Shivakumar

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.

Original language	English
Pages (from-to)	1921-1925
Number of pages	5
Journal	Solid State Sciences
Volume	13
Issue number	11
DOIs	https://doi.org/10.1016/j.solidstatesciences.2011.08.017
Publication status	Published - 01-11-2011

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.solidstatesciences.2011.08.017

Cite this

@article{e1c697e6be47429fb76b3969cc831bfb,

title = "Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films",

abstract = "The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.",

author = "{Gowrish Rao}, K. and Bangera, {Kasturi V.} and Shivakumar, {G. K.}",

year = "2011",

month = nov,

day = "1",

doi = "10.1016/j.solidstatesciences.2011.08.017",

language = "English",

volume = "13",

pages = "1921--1925",

journal = "Solid State Sciences",

issn = "1293-2558",

publisher = "Elsevier Masson SAS",

number = "11",

}

TY - JOUR

T1 - Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

AU - Gowrish Rao, K.

AU - Bangera, Kasturi V.

AU - Shivakumar, G. K.

PY - 2011/11/1

Y1 - 2011/11/1

N2 - The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.

AB - The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.

UR - http://www.scopus.com/inward/record.url?scp=80054914952&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054914952&partnerID=8YFLogxK

U2 - 10.1016/j.solidstatesciences.2011.08.017

DO - 10.1016/j.solidstatesciences.2011.08.017

M3 - Article

AN - SCOPUS:80054914952

SN - 1293-2558

VL - 13

SP - 1921

EP - 1925

JO - Solid State Sciences

JF - Solid State Sciences

IS - 11

ER -

Photoconductivity and photo-detecting properties of vacuum deposited ZnSe thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this