Abstract
The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films.
| Original language | English |
|---|---|
| Pages (from-to) | 1921-1925 |
| Number of pages | 5 |
| Journal | Solid State Sciences |
| Volume | 13 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 01-11-2011 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics
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