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Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor

  • Muhammad Atif Khan
  • , Danial Khan
  • , Amit Kumar Goyal
  • , Yehia Massoud*
  • *Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport. The photocurrent of the transistor is modulated by illuminating the transistor with laser light and varying its power and the electrostatic gate voltage. We investigated the correlation between the laser power and the on/off ratio, photocurrent, and maximum current of the device. Finally, we analyzed the regions in the transfer curve that are least sensitive and most sensitive to incident laser light.

    Original languageEnglish
    Title of host publicationOptoelectronic Devices and Integration XII
    EditorsXuping Zhang, Baojun Li, Changyuan Yu, Xinliang Zhang
    PublisherSPIE
    ISBN (Electronic)9781510667778
    DOIs
    Publication statusPublished - 2023
    EventOptoelectronic Devices and Integration XII 2023 - Beijing, China
    Duration: 14-10-202316-10-2023

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume12764
    ISSN (Print)0277-786X
    ISSN (Electronic)1996-756X

    Conference

    ConferenceOptoelectronic Devices and Integration XII 2023
    Country/TerritoryChina
    CityBeijing
    Period14-10-2316-10-23

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

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