Photothermal deflection measurement on heat transport in GaAs epitaxial layers

Sajan D. George, P. Radhakrishnan, V. P.N. Nampoori, C. P.G. Vallabhan

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24 Citations (SciVal)


In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons.

Original languageEnglish
Article number165319
Pages (from-to)1653191-1653196
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
Publication statusPublished - 01-10-2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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