Physical and electrical characteristics of AlGaN/GaN metal-oxide- semiconductor high-electron-mobility transistors with rare earth Er 2O3 as a gate dielectric

  • Ray Ming Lin*
  • , Fu Chuan Chu
  • , Atanu Das
  • , Sheng Yu Liao
  • , Shu Tsun Chou
  • , Liann Be Chang
    • *Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    13 Citations (Scopus)

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