Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500°C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods.
|Journal||IOP Conference Series: Materials Science and Engineering|
|Publication status||Published - 01-01-2015|
|Event||International Conference on Materials Science and Technology, ICMST 2012 - Kerala, India|
Duration: 10-06-2012 → 14-06-2012
All Science Journal Classification (ASJC) codes
- Materials Science(all)