Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures

A. Santhosh Kumar; K. K. Nagaraja; H. S. Nagaraja

doi:10.1088/1757-899X/73/1/012077

Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures

A. Santhosh Kumar^*
, K. K. Nagaraja
, H. S. Nagaraja

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500°C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods.

Original language	English
Article number	012077
Journal	IOP Conference Series: Materials Science and Engineering
Volume	73
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/73/1/012077
Publication status	Published - 01-01-2015
Event	International Conference on Materials Science and Technology, ICMST 2012 - Kerala, India Duration: 10-06-2012 → 14-06-2012

All Science Journal Classification (ASJC) codes

General Materials Science
General Engineering

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10.1088/1757-899X/73/1/012077

Cite this

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title = "Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures",

abstract = "Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500°C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods.",

author = "Kumar, \{A. Santhosh\} and Nagaraja, \{K. K.\} and Nagaraja, \{H. S.\}",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; International Conference on Materials Science and Technology, ICMST 2012 ; Conference date: 10-06-2012 Through 14-06-2012",

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doi = "10.1088/1757-899X/73/1/012077",

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journal = "IOP Conference Series: Materials Science and Engineering",

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T1 - Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures

AU - Kumar, A. Santhosh

AU - Nagaraja, K. K.

AU - Nagaraja, H. S.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500°C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods.

AB - Zinc oxide (ZnO) and tin doped ZnO are wide band gap semiconducting materials with excellent optoelectronic properties. In the present study ZnO and Sn: ZnO films are prepared using polymer assisted sol gel process. The thermal behaviour of the dried gel sample studied using DTA and TG analysis. TG-DTA result shown that most of the organic of PVA and CH3COO group of zinc acetate and other volatiles are removed below 500°C. The effect of Sn on the crystallinity, microstructral properties of the deposited films was investigated. XRD patterns of undoped and Sn doped ZnO films indicate enhanced intensities for the peak corresponding to (002) plane, resulting preferential orientation along the c-axis. The SEM images confirm that the grown films are composed of nanorods.

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U2 - 10.1088/1757-899X/73/1/012077

DO - 10.1088/1757-899X/73/1/012077

M3 - Conference article

AN - SCOPUS:84923233831

SN - 1757-8981

VL - 73

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

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T2 - International Conference on Materials Science and Technology, ICMST 2012

Y2 - 10 June 2012 through 14 June 2012

ER -

Polymer assisted preparation and characterization of ZnO and Sn doped ZnO nanostructures

Abstract

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