Potential improvement in power factor of (Bi0.98Ge0.02)2Te2.7Se0.3 compound due to defect engineering

Swaraangi Shirodkar; A. N. Prabhu; Suchitra Putran; Ashok Rao; U. Deepika Shanubhogue; Ganesh Shridhar Hegde

doi:10.1007/s10854-024-12673-7

Potential improvement in power factor of (Bi_0.98Ge_0.02)₂Te_2.7Se_0.3 compound due to defect engineering

Swaraangi Shirodkar, A. N. Prabhu^*, Suchitra Putran, Ashok Rao, U. Deepika Shanubhogue, Ganesh Shridhar Hegde^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In recent years, thermoelectricity has gained popularity as a renewable energy source, with applications including Peltier coolers and thermoelectric generators, particularly focusing on materials, like bismuth telluride and its doped derivatives. This study investigates Bi₂Te₃, (Bi_0.98Ge_0.02)₂Te_2.7Se_0.3, and (Bi_0.98Ge_0.02)₂Te_2.7Se_0.3/Bi₂Te₃ synthesized via solid-state reaction, revealing a rhombohedral structure in the XRD pattern and confirming chemical composition and composite homogeneity through EDS and porosity, density, and selenium integration via FESEM. Electrical resistivity decreases with rising temperature, while the Seebeck coefficient shows a linear increase, indicating n-type semiconductor behaviour. The highest power factor of 108 μW/mK² is achieved by (Bi_0.98Ge_0.02)₂Te_2.7Se_0.3, contrasting with the lowest of 20 μW/mK² observed for the pristine sample at 250 °C. Ge atoms enhance the power factor of (Bi_0.98Ge_0.02)₂Te_2.7Se_0.3 by 5.4 times compared to the pristine compound, making it ideal for thermoelectric applications through acceptor behaviour and defect engineering.

Original language	English
Article number	901
Journal	Journal of Materials Science: Materials in Electronics
Volume	35
Issue number	13
DOIs	https://doi.org/10.1007/s10854-024-12673-7
Publication status	Published - 05-2024

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1007/s10854-024-12673-7

Cite this

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title = "Potential improvement in power factor of (Bi0.98Ge0.02)2Te2.7Se0.3 compound due to defect engineering",

abstract = "In recent years, thermoelectricity has gained popularity as a renewable energy source, with applications including Peltier coolers and thermoelectric generators, particularly focusing on materials, like bismuth telluride and its doped derivatives. This study investigates Bi2Te3, (Bi0.98Ge0.02)2Te2.7Se0.3, and (Bi0.98Ge0.02)2Te2.7Se0.3/Bi2Te3 synthesized via solid-state reaction, revealing a rhombohedral structure in the XRD pattern and confirming chemical composition and composite homogeneity through EDS and porosity, density, and selenium integration via FESEM. Electrical resistivity decreases with rising temperature, while the Seebeck coefficient shows a linear increase, indicating n-type semiconductor behaviour. The highest power factor of 108 μW/mK2 is achieved by (Bi0.98Ge0.02)2Te2.7Se0.3, contrasting with the lowest of 20 μW/mK2 observed for the pristine sample at 250 °C. Ge atoms enhance the power factor of (Bi0.98Ge0.02)2Te2.7Se0.3 by 5.4 times compared to the pristine compound, making it ideal for thermoelectric applications through acceptor behaviour and defect engineering.",

author = "Swaraangi Shirodkar and Prabhu, {A. N.} and Suchitra Putran and Ashok Rao and Shanubhogue, {U. Deepika} and Hegde, {Ganesh Shridhar}",

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year = "2024",

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AU - Shirodkar, Swaraangi

AU - Prabhu, A. N.

AU - Putran, Suchitra

AU - Rao, Ashok

AU - Shanubhogue, U. Deepika

AU - Hegde, Ganesh Shridhar

PY - 2024/5

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