Potential improvement in power factor of (Bi0.98Ge0.02)2Te2.7Se0.3 compound due to defect engineering

Swaraangi Shirodkar, A. N. Prabhu, Suchitra Putran, Ashok Rao, U. Deepika Shanubhogue, Ganesh Shridhar Hegde

Research output: Contribution to journalArticlepeer-review

Abstract

In recent years, thermoelectricity has gained popularity as a renewable energy source, with applications including Peltier coolers and thermoelectric generators, particularly focusing on materials, like bismuth telluride and its doped derivatives. This study investigates Bi2Te3, (Bi0.98Ge0.02)2Te2.7Se0.3, and (Bi0.98Ge0.02)2Te2.7Se0.3/Bi2Te3 synthesized via solid-state reaction, revealing a rhombohedral structure in the XRD pattern and confirming chemical composition and composite homogeneity through EDS and porosity, density, and selenium integration via FESEM. Electrical resistivity decreases with rising temperature, while the Seebeck coefficient shows a linear increase, indicating n-type semiconductor behaviour. The highest power factor of 108 μW/mK2 is achieved by (Bi0.98Ge0.02)2Te2.7Se0.3, contrasting with the lowest of 20 μW/mK2 observed for the pristine sample at 250 °C. Ge atoms enhance the power factor of (Bi0.98Ge0.02)2Te2.7Se0.3 by 5.4 times compared to the pristine compound, making it ideal for thermoelectric applications through acceptor behaviour and defect engineering.

Original languageEnglish
Article number901
JournalJournal of Materials Science: Materials in Electronics
Volume35
Issue number13
DOIs
Publication statusPublished - 05-2024

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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