Principle Study of MoS₂FET at lower Channel Lengths

This study of a two-dimensional FET (2DFET) works with a channel made of MoS2, MoSe2, and MoTe2 and different dielectric materials. Materials such as molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), and molybdenum ditelluride (MoTe2) belong to the transition metal dichalcogenide (TMD) family and are known for their fascinating electronic properties. These materials have different band gaps, carrier mobilities, and intrinsic properties that make them ideal candidates for 2D transistor channels. In this study, we investigate the influence of different dielectric materials on the performance of 2D FETs with MoS2, MoSe2, and MoTe2 as channel materials, with a strong focus on high-speed operation. Our study analyzes performance metrics like on-current (Ion), off-current (Ioff), and on-off current ratio which will be more when compared with Si-based FETs.Notably, the choice of dielectric significantly influences these metrics, with high-k dielectrics and HfO2 often surpassing SiO2.