Probing intrinsic defects of aluminium-doped CuO thin films for solar cell applications

Adithya Prakash, Vikash Mishra, M. G. Mahesha*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Intrinsic defects in semiconductor thin films play a significant role in determining their optoelectronic properties. In this work, we investigated the impact of aluminium doping on the intrinsic defects and, thereby, the optoelectronic properties of CuO thin films deposited via spray pyrolysis. Doping considerably influenced the inherent defects of CuO thin films. Al3+ doping enhanced oxygen interstitial defects and suppressed oxygen vacancy defects. The presence of oxygen interstitials and an improvement in the crystallinity of the films resulted in favourable changes in the properties of the films. The observed modifications in the properties had a profound significance in improving the performance of CuO-based optoelectronic devices such as solar cells. Further, the ease of formation of oxygen interstitial defects compared to other possible defects and their favourable role in enhancing optoelectronic properties were confirmed through theoretical calculations. Thus, via comprehensive experimental and theoretical investigation, this study provides significant insights into the formation of defects and their influence on the properties of Al-doped CuO films.

Original languageEnglish
Pages (from-to)35184-35197
Number of pages14
JournalRSC Advances
Volume14
Issue number47
DOIs
Publication statusPublished - 05-11-2024

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering

Fingerprint

Dive into the research topics of 'Probing intrinsic defects of aluminium-doped CuO thin films for solar cell applications'. Together they form a unique fingerprint.

Cite this