TY - JOUR
T1 - Raman spectroscopy and low temperature electrical conductivity study of thermally evaporated CdS thin films
AU - Keshav, Rashmitha
AU - Rao, Ashok
AU - Mahesha, M. G.
N1 - Funding Information:
Acknowledgements The authors are grateful to VGST, Govt. of Karnataka State India (VGST/K-FIST(L1)/GRD-377/2014-15) for financial assistance.
Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018/4/1
Y1 - 2018/4/1
N2 - A systematic study has been carried out on properties of CdS thin films grown on glass substrates by thermal route and growth parameters have been optimized to achieve near stoichiometry. Raman spectroscopy of the films has been carried out to get more insight on chemical and structural information of the films. Photoluminescence study was carried out to get the knowledge of defect-states which play major role in transport mechanisms. In order to obtain electrical parameters, Hall measurement has been carried out by van der Pauw’s technique at room temperature. Also, variation of electrical resistivity of the films at temperature range 20–300 K has been studied. Finally effect of post deposition annealing on the structural, optical and electrical properties of these films has been studied.
AB - A systematic study has been carried out on properties of CdS thin films grown on glass substrates by thermal route and growth parameters have been optimized to achieve near stoichiometry. Raman spectroscopy of the films has been carried out to get more insight on chemical and structural information of the films. Photoluminescence study was carried out to get the knowledge of defect-states which play major role in transport mechanisms. In order to obtain electrical parameters, Hall measurement has been carried out by van der Pauw’s technique at room temperature. Also, variation of electrical resistivity of the films at temperature range 20–300 K has been studied. Finally effect of post deposition annealing on the structural, optical and electrical properties of these films has been studied.
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U2 - 10.1007/s11082-018-1451-y
DO - 10.1007/s11082-018-1451-y
M3 - Article
AN - SCOPUS:85044840004
SN - 0306-8919
VL - 50
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
IS - 4
M1 - 186
ER -