Realization of In2 O3 thin film transistors through reactive evaporation process

Dhananjay, Chih Wei Chu

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on Si O2 gate dielectric exhibited an on/off ratio of 104 and a field-effect mobility of 27 cm2 V s. High on-state current makes them potential candidates for flat-panel display devices.

Original languageEnglish
Article number132111
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 05-10-2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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