Realization of In2 O3 thin film transistors through reactive evaporation process

In2O3 thin films have been grown by reactive evaporation of indium in ambient oxygen. The films were structurally characterized by x-ray diffraction (XRD) and atomic force microscopy techniques. The results of XRD revealed that the films were polycrystalline in nature with preferred (222) orientation. The as-grown films were subjected to various annealing treatments to modulate the conductivity of the films for thin film transistors (TFTs). TFTs fabricated on Si O2 gate dielectric exhibited an on/off ratio of 104 and a field-effect mobility of 27 cm2 V s. High on-state current makes them potential candidates for flat-panel display devices.